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C. Delerue

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2015arXiv

Topological states in multi-orbital HgTe honeycomb lattices

Research on graphene has revealed remarkable phenomena arising in the honeycomb lattice. However, the quantum spin Hall effect predicted at the K point could not be observed in graphene and other honeycomb structures of light elements due to an insufficiently strong spin-orbit coupling. Here we show theoretically that 2D honeycomb lattices of HgTe can combine the effects of the honeycomb geometry and strong spin-orbit coupling. The conduction bands, experimentally accessible via doping, can be described by a tight-binding lattice model as in graphene, but including multi-orbital degrees of freedom and spin-orbit coupling. This results in very large topological gaps (up to 35 meV) and a flattened band detached from the others. Owing to this flat band and the sizable Coulomb interaction, honeycomb structures of HgTe constitute a promising platform for the observation of a fractional Chern insulator or a fractional quantum spin Hall phase.

preprint2013arXiv

Nanoelectronics

In this chapter we intend to discuss the major trends in the evolution of microelectronics and its eventual transition to nanoelectronics. As it is well known, there is a continuous exponential tendency of microelectronics towards miniaturization summarized in G. Moore's empirical law. There is consensus that the corresponding decrease in size must end in 10 to 15 years due to physical as well as economical limits. It is thus necessary to prepare new solutions if one wants to pursue this trend further. One approach is to start from the ultimate limit, i.e. the atomic level, and design new materials and components which will replace the present day MOS (metal-oxide-semi- conductor) based technology. This is exactly the essence of nanotechnology, i.e. the ability to work at the molecular level, atom by atom or molecule by molecule, to create larger structures with fundamentally new molecular orga- nization. This should lead to novel materials with improved physical, chemi- cal and biological properties. These properties can be exploited in new devices. Such a goal would have been thought out of reach 15 years ago but the advent of new tools and new fabrication methods have boosted the field. We want to give here an overview of two different subfields of nano- electronics. The first part is centered on inorganic materials and describes two aspects: i) the physical and economical limits of the tendency to miniaturiza- tion; ii) some attempts which have already been made to realize devices with nanometric size. The second part deals with molecular electronics, where the basic quantities are now molecules, which might offer new and quite interest- ing possibilities for the future of nanoelectronics

preprint2010arXiv

Ab initio calculation of the binding energy of impurities in semiconductors: Application to Si nanowires

We discuss the binding energy E_b of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We show that DFT succeeds in the calculation of E_b from the Kohn-Sham (KS) hamiltonian of the ionized impurity, but fails in the calculation of E_b from the KS hamiltonian of the neutral impurity, as it misses most of the interaction of the bound electron with the surface polarization charges of the donor. We trace this deficiency back to the lack of screened exchange in the present functionals.