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Researcher profile

C. Cacho

C. Cacho contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

6 published item(s)

preprint2026arXiv

Magnetic Excitations of a Half-Filled Tl-based Cuprate

Strong electron correlations drive Mott insulator transitions. Yet, there exists no framework to classify Mott insulators by their degree of correlation. Cuprate superconductors, with their tunable doping and rich phase diagrams, offer a unique platform to investigate the evolution of these interactions. However, spectroscopic access to a clean half-filled Mott-insulating state is lacking in compounds with the highest superconducting onset temperature. To fill this gap, we introduce a pristine, half-filled thallium-based cuprate system, Tl$_2$Ba$_5$Cu$_4$O$_{x}$. Using high-resolution resonant inelastic x-ray scattering, we probe long-lived magnon excitations and uncover a pronounced kink in the magnon dispersion, marked by a simultaneous change in group velocity and lifetime broadening. Modeling the dispersion within a Hubbard-Heisenberg approach, we extract the interaction strength and compare it with other cuprate systems. Our results establish a cuprate universal relation between electron-electron interaction and magnon zone-boundary dispersion. Superconductivity seems to be optimal at intermediate correlation strength, suggesting an optimal balance between localization and itinerancy.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of a uniaxial strain-induced phase transition in the 2D topological semimetal IrTe$_2$

Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain control over the diverse phase transitions and topological states in two-dimensional (2D) transition metal dichalcogenides (TMDs) remains an open challenge. Here, we exploit uniaxial strain to stabilize the long-debated structural ground state of the 2D topological semimetal IrTe$_2$, which is hidden in unstrained samples. Combined angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) data reveal the strain-stabilized phase has a 6x1 periodicity and undergoes a Lifshitz transition, granting unprecedented spectroscopic access to previously inaccessible type-II topological Dirac states that dominate the modified inter-layer hopping. Supported by density functional theory (DFT) calculations, we show that strain induces a charge transfer strongly weakening the inter-layer Te bonds and thus reshaping the energetic landscape of the system in favor of the 6x1 phase. Our results highlight the potential to exploit strain-engineered properties in layered materials, particularly in the context of tuning inter-layer behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spintronic superconductor in a bulk layered material with natural spin-valve structure

Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties in the materials with antiferromagnetic (AFM) layers, so-called natural spin-valve structure, has been reported for the Dirac Fermion and topological/axion materials. However, a bulk crystal in which magnetic and superconducting layers are alternately stacked has not been realized until now, and the search for functional properties in it is an interesting yet unexplored field in material science. Here, we discover superconductivity providing such an ideal platform in EuSn2As2 with the van der Waals stacking of magnetic Eu layers and superconducting Sn-As layers, and present the first demonstration of a natural spin-valve effect on the superconducting current. Below the superconducting transition temperature (Tc), the electrical resistivity becomes zero in the in-plane direction. In contrast, it, surprisingly, remains finite down to the lowest temperature in the out-of-plane direction, mostly due to the structure of intrinsic magnetic Josephson junctions in EuSn2As2. The magnetic order of the Eu layers (or natural spin-valve) is observed to be extremely soft, allowing one to easy control of the out-of-plane to in-plane resistivities ratio from 1 to infinity by weak external magnetic fields. The concept of multi-functional materials with stacked magnetic-superconducting layers will open a new pathway to develop novel spintronic devices with magnetically controllable superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Bulk and surface electronic structure of the dual-topology semimetal Pt2HgSe3

We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological and trivial areas. In the non-trivial $k$-space range we find surface states with multiple saddle-points in the dispersion resulting in two van Hove singularities in the surface density of states. Based on density functional theory calculations, we identify these surface states as signatures of a topological crystalline state which coexists with a weak topological phase.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Direct Observation of a Uniaxial Stress-driven Lifshitz Transition in Sr$_{2}$RuO$_{4}$

Pressure represents a clean tuning parameter for traversing the complex phase diagrams of interacting electron systems and as such has proved of key importance in the study of quantum materials. Application of controlled uniaxial pressure has recently been shown to more than double the transition temperature of the unconventional superconductor Sr$_{2}$RuO$_{4}$ for example, leading to a pronounced peak in $T_\mathrm{c}$ vs. strain whose origin is still under active debate. Here, we develop a simple and compact method to apply large uniaxial pressures passively in restricted sample environments, and utilize this to study the evolution of the electronic structure of Sr$_{2}$RuO$_{4}$ using angle-resolved photoemission. We directly visualize how uniaxial stress drives a Lifshitz transition of the $γ$-band Fermi surface, pointing to the key role of strain-tuning its associated van Hove singularity to the Fermi level in mediating the peak in $T_\mathrm{c}$. Our measurements provide stringent constraints for theoretical models of the strain-tuned electronic structure evolution of Sr$_{2}$RuO$_{4}$. More generally, our novel experimental approach opens the door to future studies of strain-tuned phase transitions not only using photoemission, but also other experimental techniques where large pressure cells or piezoelectric-based devices may be difficult to implement.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states show little temperature dependence and remain gapless across the AFM transition. The detailed electronic structure of MnBi4Te7 and its temperature evolution, together with the results of its sister compound MnBi2Te4, will not only help understand the exotic properties of this family of magnetic TQMs, but also guide the design for possible applications.

0 citations0 reviewsNo code linkedOpen access