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C. C. Yang

C. C. Yang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2014arXiv

Independent Measurement of Theta13 via Neutron Capture on Hydrogen at Daya Bay

A new measurement of the $θ_{13}$ mixing angle has been obtained at the Daya Bay Reactor Neutrino Experiment via the detection of inverse beta decays tagged by neutron capture on hydrogen. The antineutrino events for hydrogen capture are distinct from those for gadolinium capture with largely different systematic uncertainties, allowing a determination independent of the gadolinium-capture result and an improvement on the precision of $θ_{13}$ measurement. With a 217-day antineutrino data set obtained with six antineutrino detectors and from six 2.9 GW$_{th}$ reactors, the rate deficit observed at the far hall is interpreted as $\sin^22θ_{13}=0.083\pm0.018$ in the three-flavor oscillation model. When combined with the gadolinium-capture result from Daya Bay, we obtain $\sin^22θ_{13}=0.089\pm0.008$ as the final result for the six-antineutrino-detector configuration of the Daya Bay experiment.

preprint2014arXiv

Search for a Light Sterile Neutrino at Daya Bay

A search for light sterile neutrino mixing was performed with the first 217 days of data from the Daya Bay Reactor Antineutrino Experiment. The experiment's unique configuration of multiple baselines from six 2.9~GW$_{\rm th}$ nuclear reactors to six antineutrino detectors deployed in two near (effective baselines 512~m and 561~m) and one far (1579~m) underground experimental halls makes it possible to test for oscillations to a fourth (sterile) neutrino in the $10^{\rm -3}~{\rm eV}^{2} < |Δm_{41}^{2}| < 0.3~{\rm eV}^{2}$ range. The relative spectral distortion due to electron antineutrino disappearance was found to be consistent with that of the three-flavor oscillation model. The derived limits on $\sin^22θ_{14}$ cover the $10^{-3}~{\rm eV}^{2} \lesssim |Δm^{2}_{41}| \lesssim 0.1~{\rm eV}^{2}$ region, which was largely unexplored.

preprint2010arXiv

Four wave mixing study on coalescence overgrowth of GaN nanocolumns on sapphire

Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-plane sapphire substrate with metal organic chemical vapour deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction due to the lateral strain relaxation in columnar geometry. We present further growth optimization and innovative characterization of MOCVD layers, overgrown on the columnar structure with varying diameter of colums. Nanoimprint lithography was applied to open circular holes of 250, 300, 450, 600 nm in diameter on the SiO2 layer, deposited on the GaN layer on c-plane sapphire template.