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Bumsu Lee

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Published work

3 published item(s)

preprint2020arXiv

Scalable in operando strain tuning in nanophotonic waveguides enabling three-quantum dot superradiance

The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors, and spin-photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we address this challenge by patterning strain via local phase transitions to selectively tune individual quantum dots that are embedded in a photonic architecture. The patterning is implemented with in operando laser crystallization of a thin HfO$_{2}$ film "sheath" on the surface of a GaAs waveguide. Using this approach, we tune InAs quantum dot emission energies over the full inhomogeneous distribution with a step size down to the homogeneous linewidth and a spatial resolution better than 1 $μ$m. Using these capabilities, we tune multiple quantum dots into resonance within the same waveguide and demonstrate a quantum interaction via superradiant emission from three quantum dots.

preprint2015arXiv

Strong exciton-plasmon coupling in MoS2 coupled with plasmonic lattice

We demonstrate strong exciton-plasmon coupling in silver nanodisk arrays integrated with monolayer MoS2 via angle-resolved reflectance microscopy spectra of the coupled system. Strong exciton-plasmon coupling is observed with the exciton-plasmon coupling strength up to 58 meV at 77 K, which also survives at room temperature. The strong coupling involves three types of resonances: MoS2 excitons, localized surface plasmon resonances (LSPRs) of individual silver nanodisks and plasmonic lattice resonances of the nanodisk array. We show that the exciton-plasmon coupling strength, polariton composition and dispersion can be effectively engineered by tuning the geometry of the plasmonic lattice, which makes the system promising for realizing novel two-dimensional plasmonic polaritonic devices.

preprint2011arXiv

Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules

We report on infrared (IR) absorption and dc electrical measurements of thin films of poly(3-hexylthiophene) (P3HT) that have been modified by a fluoroalkyl trichlorosilane (FTS). Spectra for FTS-treated films were compared to data for electrostatically-doped P3HT in an organic field-effect transistor (OFET). The appearance of a prominent polaron band in mid-IR absorption data for FTS-treated P3HT supports the assertion of hole doping via a charge-transfer process between FTS molecules and P3HT. In highly-doped films with a significantly enhanced polaron band, we find a monotonic Drude-like absorption in the far-IR, signifying delocalized states. Utilizing a simple capacitor model of an OFET, we extracted a carrier density for FTS-treated P3HT from the spectroscopic data. With carrier densities reaching 10$^{14}$ holes/cm$^2$, our results demonstrate that FTS doping provides a unique way to study the metal-insulator transition in polythiophenes.