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Brian Wynne

Brian Wynne contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Semi-boolean and Yosida $\ell$-groups, Martinez and Yosida frames, and the $G+B$ construction

The class of semi-boolean $\ell$-groups was introduced in 1968 by A. Bigard. These are the $\ell$-groups $G$ in which the principal convex $\ell$-subgroup $G(a)$ generated by any $a \in G$ is equal to the polar $a^{\perp \perp}$. Examples include all hyperarchimedean $\ell$-groups and all existentially closed abelian $\ell$-groups. Ordered by inclusion, the set of convex $\ell$-subgroups of a semi-boolean $\ell$-group is a \Mart frame (an algebraic frame with FIP in which every element is a $d$-element). Related are the Yosida $\ell$-groups, i.e., the $\ell$-groups whose frame of convex $\ell$-subgroups is a Yosida frame (an algebraic frame with FIP in which every compact element is a meet of maximal elements). Applying results on \Mart frames and Yosida frames, we obtain new characterizations of the semi-boolean and Yosida $\ell$-groups, show that the former constitute a radical class and the latter do not, and present new examples with special properties. To build some of our examples, we introduce the $G+B$ construction for $\ell$-groups, an adaptation of the $A+B$ construction from commutative algebra.

preprint2022arXiv

Defect engineering of silicon with ion pulses from laser acceleration

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.