Accurate Determination of Semiconductor Diffusion Coefficient Using Optical Microscopy
Energy carrier transport and recombination in emerging semiconductors can be directly monitored with optical microscopy, leading to the measurement of the diffusion coefficient (D), a critical property for design of efficient optoelectronic devices. D is often determined by fitting a time-resolved expanding carrier profile after optical excitation using a Mean Squared Displacement (MSD) Model. Although this approach has gained widespread adoption, its utilization can significantly overestimate D due to the non-linear recombination processes that artificially broaden the carrier distribution profile. Here, we simulate diffusive processes in both excitonic and free carrier semiconductors and present revised MSD Models that take into account second-order (i.e. bimolecular) and third-order (i.e. Auger) processes to accurately recover D for various types of materials. For perovskite thin films, utilization of these models can reduce fitting error by orders of magnitude, especially for commonly deployed excitation conditions where carrier densities are > 5x10$^1$$^6$ cm$^-$$^3$. In addition, we show that commonly-deployed MSD Models are not well-suited for the study of films with microstructure, especially when boundary behavior is unknown and feature sizes are comparable to the diffusion length. Finally, we find that photon recycling only impacts energy carrier profiles on ultrashort time scales or for materials with fast radiative decay times. We present clear strategies to investigate energy transport in disordered materials for more effective design and optimization of electronic and optoelectronic devices.