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Researcher profile

Boyang Zhao

Boyang Zhao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciComputer Visioneess.IVMultimediaphysics.app-phphysics.optics

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Published work

4 published item(s)

preprint2026arXiv

Anti-reflection coatings for highly anisotropic materials in the mid infrared

We develop and optimize thin anti-reflection coatings (ARCs) for highly anisotropic materials in the mid infrared. Unlike conventional ARCs that assume nearly isotropic refractive indices, this work fully integrates the anisotropic nature of materials into the design process. We describe two designs of thin ARCs for highly anisotropic materials: a single form-birefringent layer, and a planar bilayer. We realized the planar bilayer ARC experimentally, demonstrating excellent mid-infrared anti-reflectance across over a broad range of angles for all polarizations.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

DDNet: A Dual-Stream Graph Learning and Disentanglement Framework for Temporal Forgery Localization

The rapid evolution of AIGC technology enables misleading viewers by tampering mere small segments within a video, rendering video-level detection inaccurate and unpersuasive. Consequently, temporal forgery localization (TFL), which aims to precisely pinpoint tampered segments, becomes critical. However, existing methods are often constrained by \emph{local view}, failing to capture global anomalies. To address this, we propose a \underline{d}ual-stream graph learning and \underline{d}isentanglement framework for temporal forgery localization (DDNet). By coordinating a \emph{Temporal Distance Stream} for local artifacts and a \emph{Semantic Content Stream} for long-range connections, DDNet prevents global cues from being drowned out by local smoothness. Furthermore, we introduce Trace Disentanglement and Adaptation (TDA) to isolate generic forgery fingerprints, alongside Cross-Level Feature Embedding (CLFE) to construct a robust feature foundation via deep fusion of hierarchical features. Experiments on ForgeryNet and TVIL benchmarks demonstrate that our method outperforms state-of-the-art approaches by approximately 9\% in AP@0.95, with significant improvements in cross-domain robustness.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Discovery of highly-polarizable semiconductors BaZrS3 and Ba3Zr2S7

There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogenides. Here we introduce complex chalcogenides in the Ba-Zr-S system in perovskite and Ruddlesden-Popper structures as a new family of highly polarizable semiconductors. We report the results of impedance spectroscopy on single crystals that establish BaZrS3 and Ba3Zr2S7 as semiconductors with low-frequency relative dielectric constant ($ε_0$) in the range 50 - 100, and band gap in the range 1.3 - 1.8 eV. Our electronic structure calculations indicate the enhanced dielectric response in perovskite BaZrS3 versus Ruddlesden-Popper Ba3Zr2S7 is primarily due to enhanced IR mode-effective charges, and variations in phonon frequencies along $\langle 001 \rangle$; differences in the Born effective charges and the lattice stiffness are of secondary importance. This combination of covalent bonding in crystal structures more common to complex oxides results in a sizable Fröhlich coupling constant, which suggests that charge carriers are large polarons.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Crystal growth and structural analysis of perovskite chalcogenide BaZrS$_3$ and Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$

Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space group of $Pnma$ with lattice constants of $a$ = 7.056(3) Å\/, $b$ = 9.962(4) Å\/, $c$ = 6.996(3) Å\/ for BaZrS$_3$ and $P4_2/mnm$ with $a$ = 7.071(2) Å\/, $b$ = 7.071(2) Å\/, $c$ = 25.418(5) Å\/ for Ba$_3$Zr$_2$S$_7$. Rocking curves with full-width-at-half-maximum of 0.011$^\circ$ for BaZrS$_3$ and 0.027$^\circ$ for Ba$_3$Zr$_2$S$_7$ were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles.

0 citations0 reviewsNo code linkedOpen access