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Abhiyan Pandit

Abhiyan Pandit contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Anharmonic effects on lattice dynamics and thermal transport of two-dimensional InTe Monolayer

The lattice thermal conductivity plays a key role in the performance of thermoelectric materials, where the lower values lead to a higher figure of merit values. Two-dimensional group III-VI monolayers such as InTe are promising materials for TE energy generation owing to their low that leads to high TE figure of merit values. In this work, we investigate the influence of the lattice anharmonicity on the lattice thermal conductivity of the InTe monolayer. The thermodynamic parameters are calculated by using the self-consistent phonon theory. The lattice thermal conductivity value of the InTe monolayer is obtained to be 0.30 by using the standard Boltzmann transport equation (BTE) approach, while it is 3.58 by using SCP + BTE approach. These results confirm the importance of the anharmonic effects on the lattice thermal conductivity value, where it was found to be significantly higher (91%) using the SCP + BTE approach than that obtained using the standard BTE approach.

preprint2020arXiv

Thermal conductivity and enhanced thermoelectric performance of SnTe bilayer

Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improved thermoelectric properties upon the reduction of their dimensionality. Here we found the tilted AA + s stacked two-dimensional (2D) SnTe bilayer as the most stable phase among several stackings as predicted by the structural optimization and phonon transport properties. The carrier mobility and relaxation time are evaluated using the deformation potential theory, which is found to be relatively high due to the high 2D elastic modulus, low deformation potential constant, and moderate effective masses. The SnTe bilayer shows a high Seebeck coefficient, high electrical conductivity, and ultralow lattice thermal conductivity. High TE figure of merit (ZT) values, as high as 4.61 along the zigzag direction, are predicted for the SnTe bilayer. These ZT values are much enhanced as compared to the bulk as well as monolayer SnTe and other 2D compounds.