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Bo B. Iversen

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2021arXiv

On single crystal total scattering data reduction and correction protocols for analysis in direct space

We explore data reduction and correction steps and processed data reproducibility in the emerging single crystal total scattering based technique of three-dimensional differential atomic pair distribution function (3D-$Δ$PDF) analysis. All steps from sample measurement to data-processing are outlined in detail using a CuIr$_2$S$_4$ example crystal studied in a setup equipped with a high-energy x-ray beam and a flat panel area detector. Computational overhead as it pertains to data-sampling and the associated data processing steps is also discussed. Various aspects of the final 3D-$Δ$PDF reproducibility are explicitly tested by varying data-processing order and included steps, and by carrying out a crystal-to-crystal data comparison. We identify situations in which the 3D-$Δ$PDF is robust, and caution against a few particular cases which can lead to inconsistent 3D-$Δ$PDFs. Although not all the approaches applied here-in will be valid across all systems, and a more in-depth analysis of some of the effects of the data processing steps may still needed, the methods collected here-in represent the start of a more systematic discussion about data processing and corrections in this field.

preprint2020arXiv

Expression and interactions of stereo-chemically active lone pairs and their relation to structural distortions and thermal conductivity

Stereo-chemically active lone pairs are typically described as an important non-bonding effect, and large interest has centered on understanding the derived effect of lone pair expression on physical properties such as the thermal conductivity. To manipulate such properties, it is essential to understand the conditions that lead to lone pair expression and to provide a quantitative chemical description. Here we first use density functional theory calculations to establish the presence of stereo-chemically active lone pairs on antimony in $\text{MnSb}_{2}\text{O}_{4}$. The lone pairs are formed through a similar mechanism to those in binary post-transition metal compounds in an oxidation state of two less than their main group number, where the degree of orbital interaction determines the expression of the lone pair. In $\text{MnSb}_{2}\text{O}_{4}$ the Sb lone pairs interact through a void space in the crystal structure, and they minimize their mutual repulsion by introducing a deflection angle. This angle increases significantly with decreasing Sb-Sb distance, thus showing the highly destabilizing nature of the lone pair interactions. Analysis of the chemical bonding in the structure shows that it is dominated by polar covalent interactions. A database search of related ternary chalcogenide structures shows that for structures with a lone pair the degree of lone pair expression is largely determined by whether the antimony-chalcogen units are connected or not, suggesting a cooperative effect. Isolated $\text{SbX}_3$ units have larger X-Sb-X bond angles, and therefore weaker lone pair expression than connected units. Since increased lone pair expression is equivalent to an increased orbital interaction (covalent bonding), which typically leads to increased heat conduction, this can explain the previously established correlation between larger bond angles and lower thermal conductivity.

preprint2015arXiv

Large Seebeck Effect by Charge-Mobility Engineering

The Seebeck effect describes the generation of an electric potential in a conducting solid exposed to a temperature gradient. Besides fundamental relevance in solid state physics, it serves as a key quantity to determine the performance of functional thermoelectric materials. In most cases, it is dominated by an energy-dependent electronic density of states at the Fermi level, in line with the prevalent efforts toward superior thermoelectrics through the engineering of electronic structure. Here, we demonstrate an alternative source for the Seebeck effect based on charge-carrier relaxation: A charge mobility that changes rapidly with temperature can result in a sizeable addition to the Seebeck coefficient. This new Seebeck source is demonstrated explicitly for Ni-doped CoSb3, where a dramatic mobility change occurs due to the crossover between two different charge-relaxation regimes. Our findings unveil the origin of pronounced features in the Seebeck coefficient of many other elusive materials characterized by a significant mobility mismatch. As the physical origin for the latter can vary greatly, our proposal provides a unifying framework for the understanding of a large panoply of thermoelectric phenomena. When utilized appropriately, this effect can also provide a novel route to the design of improved thermoelectric materials for applications in solid-state cooling or power generation.

preprint2014arXiv

Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$

The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and Bi$_2$Se$_3$ conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred milli-electronvolts above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi$_2$Se$_3$ which also leads to a two-dimensional electron state in the Bi$_2$Se$_3$ conduction band with a strong Rashba spin-splitting, coexisting with the topological state and bilayer valence band.

preprint2013arXiv

Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$

We show that the colossal thermoelectric power, $S(T)$, observed in the correlated semiconductor FeSb$_2$ below 30\,K is accompanied by a huge Nernst coefficient $ν(T)$ and magnetoresistance MR$(T)$. Markedly, the latter two quantities are enhanced in a strikingly similar manner. While in the same temperature range, $S(T)$ of the reference compound FeAs$_2$, which has a seven-times larger energy gap, amounts to nearly half of that of FeSb$_2$, its $ν(T)$ and MR$(T)$ are intrinsically different to FeSb$_2$: they are smaller by two orders of magnitude and have no common features. With the charge transport of FeAs$_2$ successfully captured by the density functional theory, we emphasize a significantly dispersive electron-relaxation time $τ(ε_k)$ due to electron-electron correlations to be at the heart of the peculiar thermoelectricity and magnetoresistance of FeSb$_2$.

preprint2011arXiv

Enhanced electron correlations in FeSb$_2$

FeSb$_2$ has been recently identified as a new model system for studying many-body renormalizations in a $d$-electron based narrow gap semiconducting system, strongly resembling FeSi. The electron-electron correlations in FeSb$_2$ manifest themselves in a wide variety of physical properties including electrical and thermal transport, optical conductivity, magnetic susceptibility, specific heat and so on. We review some of the properties that form a set of experimental evidences revealing the crucial role of correlation effects in FeSb$_2$. The metallic state derived from slight Te doping in FeSb$_2$, which has large quasiparticle mass, will also be introduced.