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Bing Shi

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Published work

4 published item(s)

preprint2016arXiv

X-ray-induced photoemission yield for surface studies of solids beyond the photoelectron escape depth

X-ray-induced photoemission in materials research is commonly acknowledged as a method with a probing depth limited by the escape depth of the photoelectrons. This general statement should be complemented with exceptions arising from the distribution of the X-ray wavefield in the material. Here we show that the integral hard-X-ray-induced photoemission yield is modulated by the Fresnel reflectivity of a multilayer structure with the signal originating well below the photoelectron escape depth. A simple electric self-detection of the integral photoemission yield and Fourier data analysis permit extraction of thicknesses of individual layers. The approach does not require detection of the reflected radiation and can be considered as a framework for non-invasive evaluation of buried layers with hard X-rays under grazing incidence.

preprint2014arXiv

Flux monitoring hard X-ray optics in a single electrode configuration

To explore possibilities for X-ray flux monitoring on optical elements electrical responses of silicon and diamond single crystals and that of an X-ray mirror were studied under exposure to hard X-rays in a single electrode configuration in ambient air. To introduce flux monitoring as a non-invasive capability a platinum electrode was deposited on a small unexposed portion of the entrance surface of the crystals while for the X-ray mirror the entire mirror surface served as an electrode. It was found that the electrical responses are affected by photoemission and photoionization of the surrounding air. The influence of these factors was quantified using estimations of total electron yield and the ionization current. It is shown that both phenomena can be used for the non-invasive monitoring of hard X-ray flux on the optical elements. Relevant limits of applicability such as detection sensitivity and charge collection efficiency are identified and discussed.

preprint2011arXiv

Periodic Variation of Stress in Sputter Deposited Si/WSi2 Multilayers

A tension increment after sputter deposition of 1 nm of WSi2 onto sputtered Si was observed at low Ar gas pressures. Wafer curvature data on multilayers were found to have a periodic variation corresponding to the multilayer period, and this permitted statistical analyses to improve the sensitivity to small stresses. The observation of tension instead of compression in the initial stage of growth is new and a model invoking surface rearrangement is invoked. The data also bear on an unusual surface smoothing phenomena for sputtered Si surfaces caused by the sputter deposition of WSi2 . We furthermore report that for low Ar pressures the Si layers are the predominant source of built-up stress.

preprint2010arXiv

Pressure-dependent transition from atoms to nanoparticles in magnetron sputtering: Effect on WSi2 film roughness and stress

We report on the transition between two regimes from several-atom clusters to much larger nanoparticles in Ar magnetron sputter deposition of WSi2, and the effect of nanoparticles on the properties of amorphous thin films and multilayers. Sputter deposition of thin films is monitored by in situ x-ray scattering, including x-ray reflectivity and grazing incidence small angle x-ray scattering. The results show an abrupt transition at an Ar background pressure Pc; the transition is associated with the threshold for energetic particle thermalization, which is known to scale as the product of the Ar pressure and the working distance between the magnetron source and the substrate surface. Below Pc smooth films are produced, while above Pc roughness increases abruptly, consistent with a model in which particles aggregate in the deposition flux before reaching the growth surface. The results from WSi2 films are correlated with in situ measurement of stress in WSi2/Si multilayers, which exhibits a corresponding transition from compressive to tensile stress at Pc. The tensile stress is attributed to coalescence of nanoparticles and the elimination of nano-voids.