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Researcher profile

Binbin Wang

Binbin Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticscond-mat.mtrl-sciphysics.atom-ph

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Published work

4 published item(s)

preprint2022arXiv

Atomic Layer Epitaxy of Kagome Magnet Fe${_3}$Sn${_2}$ and Sn-modulated Heterostructures

Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High-efficiency second-harmonic and sum-frequency generation in a silicon nitride microring integrated with few-layer GaSe

Silicon nitride (SiN) photonics platform has attributes of ultra-low linear and nonlinear propagation losses and CMOS-compatible fabrication process, promising large-scale multifunctional photonic circuits. However, the centrosymmetric nature of SiN inhibits second-order nonlinear optical responses in its photonics platform, which is desirable for developing efficient nonlinear active devices. Here, we demonstrate high-efficiency second-order nonlinear processes in SiN photonics platform by integrating a few-layer GaSe flake on a SiN microring resonator. With the pump of microwatts continuous-wave lasers, second-harmonic generation and sum-frequency generation with the conversion efficiencies of 849%/W and 123%/W, respectively, are achieved, which benefit from the ultrahigh second-order nonlinear susceptibility of GaSe, resonance enhanced GaSe-light interaction, and phase-matching condition satisfied by the mode engineering. Combining with the easy integration, the GaSe-assisted high-efficiency second-order nonlinear processes offer a new route to enriching already strong functionality of SiN photonics platform in nonlinear optics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electromagnetically Induced Transparency of Interacting Rydberg Atoms with Two-Body dephasing

We study electromagnetically induced transparency of a ladder type configuration in ultracold atomic gases, where the upper level is an electronically highly excited Rydberg state. The strong two-body interaction in the Rydberg state leads to the excitation blockade, where all but one atoms are shifted out of resonance such that the transmission of the probe light is affected. We show that molecular coupling in the Rydberg state causes an effective, two-body dephasing. The presence of the two-body dephasing leads to a similar blockade effect. Hence the overall blockade effect is enhanced by the two-body dephasing. Through numerical and approximately analytical calculations, we find that the transmission is reduced drastically by the presence of two-body dephasing in the transparent window, which is accompanied by strong photon-photon anti-bunching. Around the Autler-Townes splitting, the photon bunching is amplified by the two-body dephasing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30° twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have the quasicrystal like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG is investigated using scanning tunneling microscopy (STM) and spectroscopy (STS). The energy-dependent local density of states (DOS) with in-situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG, and provides insights of the electronic properties and interlayer coupling in this intriguing system.

0 citations0 reviewsNo code linkedOpen access