Source author record

Biliana Paskaleva

Biliana Paskaleva appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

1works
4topics
2close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

1 published item(s)

preprint2020arXiv

Learning Compact Physics-Aware Delayed Photocurrent Models Using Dynamic Mode Decomposition

Radiation-induced photocurrent in semiconductor devices can be simulated using complex physics-based models, which are accurate, but computationally expensive. This presents a challenge for implementing device characteristics in high-level circuit simulations where it is computationally infeasible to evaluate detailed models for multiple individual circuit elements. In this work we demonstrate a procedure for learning compact delayed photocurrent models that are efficient enough to implement in large-scale circuit simulations, but remain faithful to the underlying physics. Our approach utilizes Dynamic Mode Decomposition (DMD), a system identification technique for learning reduced order discrete-time dynamical systems from time series data based on singular value decomposition. To obtain physics-aware device models, we simulate the excess carrier density induced by radiation pulses by solving numerically the Ambipolar Diffusion Equation, then use the simulated internal state as training data for the DMD algorithm. Our results show that the significantly reduced order delayed photocurrent models obtained via this method accurately approximate the dynamics of the internal excess carrier density -- which can be used to calculate the induced current at the device boundaries -- while remaining compact enough to incorporate into larger circuit simulations.