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Bhaskaran Muralidharan

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Published work

28 published item(s)

preprint2026arXiv

Image Synthesis Using Spintronic Deep Convolutional Generative Adversarial Network

The computational requirements of generative adversarial networks (GANs) exceed the limit of conventional Von Neumann architectures, necessitating energy efficient alternatives such as neuromorphic spintronics. This work presents a hybrid CMOS-spintronic deep convolutional generative adversarial network (DCGAN) architecture for synthetic image generation. The proposed generative vision model approach follows the standard framework, leveraging generator and discriminators adversarial training with our designed spintronics hardware for deconvolution, convolution, and activation layers of the DCGAN architecture. To enable hardware aware spintronic implementation, the generator's deconvolution layers are restructured as zero padded convolution, allowing seamless integration with a 6-bit skyrmion based synapse in a crossbar, without compromising training performance. Nonlinear activation functions are implemented using a hybrid CMOS domain wall based Rectified linear unit (ReLU) and Leaky ReLU units. Our proposed tunable Leaky ReLU employs domain wall position coded, continuous resistance states and a piecewise uniaxial parabolic anisotropy profile with a parallel MTJ readout, exhibiting energy consumption of 0.192 pJ. Our spintronic DCGAN model demonstrates adaptability across both grayscale and colored datasets, achieving Fr'echet Inception Distances (FID) of 27.5 for the Fashion MNIST and 45.4 for Anime Face datasets, with testing energy (training energy) of 4.9 nJ (14.97~nJ/image) and 24.72 nJ (74.7 nJ/image).

preprint2023arXiv

Giant excitonic magneto-optical Faraday rotation in single semimagnetic CdTe/Cd_{1-x}Mn_{x}Te quantum ring

Magnetic tuning of the bound exciton states and corresponding giant Zeeman splitting (GZS) between σ^{+} and σ^{-} excitonic transitions in CdTe/Cd_{1-x}Mn_{x}Te quantum ring has been investigated in the Faraday configuration for various concentrations of Mn^{2+} ions, using the variational technique in the effective mass approximation. The sp-d exchange interaction between the localized magnetic impurity ions and the delocalized charge carriers has been accounted via mean-field theory with the inclusion of a modified Brillouin function. The enhancement of the GZS, and in turn, the effective g-factor with the application of an external magnetic field, is strikingly manifested in type-I - type-II transition in the band structure, which has been well explained by computing the overlap integral between the electron and hole, and the in-plane exciton radius. This highlights the extraordinary magneto-optical properties, including the giant Faraday rotation and associated Verdet constant, which have been calculated using single oscillator model. The oscillator strength and exciton lifetime have been estimated, and are found to be larger than in the bulk diluted magnetic semiconductors (DMS) and quantum wells, reflecting stronger confinement inside the quantum ring. The results show that the DMS-based quantum ring exhibits more extensive Zeeman splitting, which gives rise to ultra-high Verdet constant of 2.6 \times 10^{9}rad/Tesla/m, which are a few orders of magnitude larger than in the existing quantum systems and magneto-optical materials.

preprint2022arXiv

Electrical and magneto transport in 2D semiconducting MXene Ti2CO2

The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and concentration, ranging from 0.2 to around 1.3 for weak magnetic fields. The electrical transport was modelled primarily using three scattering mechanisms: piezoelectric scattering, acoustic scattering, and polar optical phonons. Even though the mobility in this material is primarily limited by acoustic phonons, piezoelectric scattering also plays an important role which was not highlighted earlier.

preprint2022arXiv

Exciton magnetic polaron in CdTe/Cd_{1-x}Mn_{x}Te semimagnetic quantum ring

Magnetically doped nanostructures can significantly enhance the interaction between the band carriers and the dopant atoms. Motivated by the demonstration of the enhanced sp-d exchange interaction in quantum confined structures with the increased stability of the exciton magnetic polaron (EMP), we report the quantitative and qualitative analyses of the EMP formation in CdTe/Cd_{1-x}Mn_{x}Te diluted magnetic quantum ring (QR). The QR with two different configurations: (i) the non-magnetic ring (CdTe) embedded in the semimagnetic Cd_{1-x}Mn_{x}Te matrix, and (ii) magnetically non-uniform quantum structures embedded with Mn2+ ions both in the ring and in the barrier regimes, have been investigated for various mole fractions of the Mn dopants. The larger polaron binding energy (EMP) of 23meV is estimated for the 5% molar Mn contents compared to the other quantum confined systems made of CdMnTe. The magnetic field dependence of the MP energy and the corresponding polaron parameters like exchange field, localization radius of the MP, and the degree of circular polarization induced by the external applied magnetic field at T = 4.2K have been derived. The obtained results are in excellent agreement with the trend of the significant degradation of EMP in an external magnetic field, and with the contradictory tendencies of EMP for the QR with configuration (i) and (ii), as reported from the time-integrated measurements based on selective excitation for the quantum systems made of CdMnTe and other DMS materials.

preprint2022arXiv

Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator phase. Investigating workable device structures, we uncover fundamental sub-threshold limits posed by the gating mechanism that effectuates such a transition, thereby emphasizing the need for innovations on materials and device structures. Detailing the complex band translation physics related to the quantum spin Hall effect phase transition, it is shown that a gating strategy to beat the thermionic limit can be engineered at the cost of sacrificing the dissipationless ON-state conduction. It is then demonstrated that an out-of-plane antiferromagnetic exchange introduced in the material via proximity coupling can incite transitions between the quantum spin-valley Hall and the spin quantum anomalous Hall phase, which can ultimately ensure the topological robustness of the ON state while surpassing the thermionic limit. Our work thus underlines the operational criteria for building topological transistors using quantum materials that can overcome the Boltzmann's tyranny while preserving the topological robustness.

preprint2022arXiv

Silicene for flexible electronics

The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoretical model derived from the integration of \textit{ab-initio} density-functional theory and quantum transport theory, we investigate the piezoresistance effect of silicene in the nanoscale regime. Like graphene, we obtain a small value of piezoresistance gauge factor of silicene, which is sinusoidally dependent on the transport angle. The small gauge factor of silicene is attributed to its robust Dirac cone and strain-independent valley degeneracy. Based on the obtained results, we propose to use silicene as an interconnect in flexible electronic devices and a reference piezoresistor in strain sensors. This work will hence pave the way for exploring flexible electronics applications in other 2D-Xene materials.

preprint2021arXiv

Can non-local conductance spectra conclusively signal Majorana zero modes? -- Insights from von Neumann entropy

The topological origin of the zero bias conductance signatures obtained via conductance spectroscopy in topological superconductor hybrid systems is a much contended issue. Recently, non-local conductance signatures that exploit the non-locality of the zero modes in three terminal hybrid setups have been proposed as means to ascertain the definitive presence of Majorana modes. The topological entanglement entropy, which is based on the von Neumann entropy, is yet another way to gauge the non-locality in connection with the bulk-boundary correspondence of a topological phase. We show that while both the entanglement entropy and the non-local conductance exhibit a clear topological phase transition signature for long enough pristine nanowires, non-local conductance fails to signal a topological phase transition for shorter disordered wires. While recent experiments have indeed shown premature gap-closure signatures in the non-local conductance spectra, we believe that the entanglement entropy can indeed signal a genuine transition, regardless of the constituent non-idealities in an experimental situation. Our results thereby point toward furthering the development of experimental techniques beyond conductance measurements to achieve a conclusive detection of Majorana zero modes.

preprint2021arXiv

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

In pursuit of designing superior type-II superlattice barrier infrared detectors, this study encompasses an exhaustive analysis of utilizing M-structured superlattices for both the absorber and barrier layers through proper band engineering and discusses its potential benefits over other candidates. The electronic band properties of ideally infinite M-structures are calculated using the eight band $k.p$ method which takes into account the effects of both strain and microscopic interface asymmetry to primarily estimate the bandgap and density-of-states effective mass and their variation with respect to the thicknesses of the constituent material layers. In contrast, for practical finite-period structures, the local density-of-states and spectral tunneling transmission and current calculated using the Keldysh non-equilibrium Green's function approach with the inclusion of non-coherent scattering processes offer deep insights into the qualitative aspects of miniband and localization engineering via structural variation. Our key results demonstrate how to achieve a wide infrared spectral range, reduce tunneling dark currents, induce strong interband wavefunction overlaps at the interfaces for adequate absorption, and excellent band-tunability to facilitate unipolar or bipolar current blocking barriers. This study, therefore, perfectly exemplifies the utilization of 6.1 Angstrom material library to its full potential through the demonstration of band engineering in M-structured superlattices and sets up the right platform to possibly replace other complex superlattice systems for targeted applications.

preprint2021arXiv

Proposal for a solid-state magnetoresistive Larmor quantum clock

We propose a solid-state implementation of the Larmor clock that exploits tunnel magnetoresistance to distill information on how long itinerant spins take to traverse a barrier embedded in it. Keeping in mind that the tunnelling time innately involves pristine pre-selection and post-selection, our proposal takes into account the detrimental aspects of multiple reflections by incorporating multiple contacts, multiple current measurements and suitably defined magnetoresistance signals. Our analysis provides a direct mapping between the magnetoresistance signals and the tunneling times and aligns well with the interpretation in terms of generalized quantum measurements and quantum weak values. By means of an engineered pre-selection in one of the ferromagnetic contacts, we also elucidate how one can make the measurement "weak" by minimizing the back-action, while keeping the tunneling time unchanged. We then analyze the resulting interpretations of the tunneling time and the measurement back action in the presence of phase breaking effects that are intrinsic to solid state systems. We unravel that while the time-keeping aspect of the Larmor clock is reasonably undeterred due to momentum and phase relaxation processes, it degrades significantly in the presence of spin-dephasing. We believe that the ideas presented here also open up a fructuous solid state platform to encompass emerging ideas in quantum technology such as quantum weak values and its applications, that are currently exclusive to quantum optics and cold atoms.

preprint2021arXiv

Robust all-electrical topological valley filtering using monolayer 2D-Xenes

We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with conventional quantum spin-Hall edge states localized around the $X$-points, the interface states appearing at the domain wall between topologically distinct phases are either from the $K$ or $K^{'}$ points, making them suitable prospects for serving as valley-polarized channels. We show that the presence of a large band-gap quantum spin Hall effect enables the spatial separation of the spin-valley locked helical interface states with the valley states being protected by spin conservation, leading to a robustness against short-range non-magnetic disorder. By adopting the scattering matrix formalism on a suitably designed device structure, valley-resolved transport in the presence of non-magnetic short-range disorder for different 2D-Xene materials is also analyzed in detail. Our numerical simulations confirm the role of spin-orbit coupling in achieving an improved valley filter performance with a perfect quantum of conductance attributed to the topologically protected interface states. Our analysis further elaborates clearly the right choice of material, device geometry and other factors that need to be considered while designing an optimized valleytronic filter device.

preprint2020arXiv

AMMCR: Ab-initio model for mobility and conductivity calculation by using Rode Algorithm

We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derived from the Density Functional Theory (DFT). We have demonstrated good agreement with experimental results for the case of Cadmium Sulfide (CdS). We also provide a comparison with the widely used method, the so called Relaxation Time Approximation (RTA) and demonstrated the improvisation of the results compared to RTA. The present version of the module is interfaced with Vienna ab-initio simulation package (VASP).

preprint2020arXiv

Three terminal vibron coupled hybrid quantum dot thermoelectric refrigeration

A three terminal nanoscale refrigeration concept based on a vibron-coupled quantum dot hybrid system coupled to two electronic reservoirs and a phonon bath is proposed and analyzed in detail. While investigating the non-trivial role of electron-phonon interactions, we show that, although they are well known to be detrimental from a general refrigeration perspective, can be engineered to favorably improve the trade-off between the cooling power (CP) and the coefficient-of-performance (COP). Furthermore, an additional improvement in the trade-off can be facilitated by applying a high electronic thermal bias. However, the allowed maximum of the thermal bias being strongly limited by the electron-phonon coupling, in turn, determines the lowest achievable temperature of the cooled body. It is further demonstrated that such interactions drive a phonon flow between the dot and bath whose direction and magnitude depend on the temperature difference between the dot and bath. To justify its impact in optimizing the peak CP and COP, we show that a weak coupling with the bath is preferable when the phonons relax through it and a strong coupling is suitable in the opposite case when the phonons are extracted from the bath. Finally, in studying the effect of asymmetry in electronic couplings, we show that a stronger coupling is favorable with the contact whose temperature is closer to that of the bath. Combining these aspects, we believe that this study could offer important guidelines for a possible realization of molecular and quantum dot thermoelectric refrigerator.

preprint2019arXiv

Energy bandpass filtering in superlattice phase change memories

We propose energy bandpass filtering employed using the idea of anti-reflection heterostructures as a means to reduce the energy requirements of a superlattice phase change memory based on GeTe and Sb$_{2}$Te$_{3}$ heterostructures. Different configurations of GeTe/Sb$_{2}$Te$_{3}$ superlattices are studied using the non-equilibrium Green's function approach. Our electronic transport simulations calculate the coupling parameter for the high resistance covalent state, to $97 \%$ that of the stable low resistance resonant state, maintaining the ON/OFF ratio of 100 for a reliable read operation. By examining various configurations of the superlattice structures we conclude that the inclusion of anti-reflection units on both sides of the superlattice increases the overall ON/OFF ratio by an order of magnitude which can further help in scaling down of the memory device. It is also observed that the device with such anti-reflection units exhibits 32$\%$ lesser RESET voltage than the most common PCM superlattice configurations and 27$\%$ in the presence of elastic dephasing. Moreover, we also find that the ON/OFF ratios in these devices are also resilient to the variations in the periodicity of the superlattice.

preprint2019arXiv

Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields

We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit ($0\%$-$10\%$). The longitudinal and transverse gauge factors are identical along armchair and zigzag directions. Our model predicts a significant variation ($\approx 1000\% $ change) in transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is $\approx 0.3$ whereas the transverse gauge factor is $\approx -3.3$. We rationalize our prediction using deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain, leading to an inverse change in gauge factor. The results obtained herein may serve as a template for high strain piezoresistance effect of graphene in nano electromechanical systems.

preprint2019arXiv

Semi-classical electronic transport properties of ternary compound AlGaAs$_2$: Role of different scattering mechanisms

We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab-initio parameters. We consider AlGaAs2 to have two distinct crystal geometries, one in tetragonal phase (space group: ), while the other one having body centered tetragonal crystal structure (space group:). We have observed higher electron mobility in the body centered tetragonal phase, thereby making it more suitable for high mobility device application, over the tetragonal phase. In order to understand the differences in electron moblities for these two phases, curvatures of the E-k graph of the conduction bands for these phases have been compared. At room temperature, the dominant contribution in electron mobility was found to be provided by inelastic POP scattering. We have also noted that mobility is underestimated in relaxation time approximation as compared with the Rode's iterative approach.

preprint2016arXiv

Resonant enhancement in nanostructured thermoelectric performance via electronic thermal conductivity engineering

The use of an asymmetric broadening in the transport distribution, a characteristic of resonant structures, is proposed as a route to engineer a decrease in electronic thermal conductivity thereby enhancing the electronic figure of merit in nanostructured thermoelectrics. Using toy models, we first demonstrate that a decrease in thermal conductivity resulting from such an asymmetric broadening may indeed lead to an electronic figure of merit well in excess of 1000 in an idealized situation and in excess of 10 in a realistic situation. We then substantiate with realistic resonant structures designed using graphene nano-ribbons by employing a tight binding framework with edge correction that match density functional theory calculations under the local density approximation. The calculated figure of merit exceeding 10 in such realistic structures further reinforces the concept and sets a promising direction to use nano-ribbon structures to engineer a favorable decrease in the electronic thermal conductivity.

preprint2016arXiv

Role of incoherent scattering on energy filtering in nanostructured thermoelectric generators

The physics of energy filtering in electronic transport through nanoscale barriers is a fundamental aspect in the context of electronic engineering of nanostructured thermoelectrics. In the context of thermoelectric generators, it aims to engineer the Seebeck coefficient to favorably increase the power factor and ultimately the power generated. In this work, we employ the incoherent non-equilibrium Green's function formalism to investigate in detail the physics of energy filtering and how it leads to a direct enhancement in power generation across nanostructured thermoelectrics featuring a single planar energy barrier. In particular, we reinforce that the enhancement in the generated power via energy filtering at a particular operating efficiency is a characteristic of incoherent scattering and is absent in ballistic devices. In such cases, by assuming an energy dependent relaxation time, $τ(E)=kE^r$, we show that there exists a minimum value $r_{min}$ for which the thermoelectric power generation is enhanced and thereby leading to a degradation in power generation for $r<r_{min}$. For bulk generators, we delve into the details of intermode scattering and show that such scattering processes between electrons in higher energy modes and lower energy modes have a finite contribution to the enhancement in the generated power. We also discuss realistic aspects such as finite width of energy barriers and imperfect energy filtering due to partial reflections. In particular, we show that such imperfect filtering and partial transmission of electrons near the top of the barrier affects the enhancement in the generated power drastically in the high efficiency regime of operation. Analysis of the results obtained in this work should provide general design guidelines for nanostructured enhancement in power generation via energy filtering.

preprint2016arXiv

Thermoelectric study of dissipative quantum dot heat engines

This paper examines the thermoelectric response of a dissipative quantum dot heat engine based on the Anderson-Holstein model in two relevant operating limits: (i) when the dot phonon modes are out of equilibrium, and (ii) when the dot phonon modes are strongly coupled to a heat bath. In the first case, a detailed analysis of the physics related to the interplay between the quantum dot level quantization, the on-site Coulomb interaction and the electron-phonon coupling on the thermoelectric performance reveals that an n-type heat engine performs better than a p-type heat engine. In the second case, with the aid of the dot temperature estimated by incorporating a {\it{thermometer bath}}, it is shown that the dot temperature deviates from the bath temperature as electron-phonon interaction becomes stronger. Consequently, it is demonstrated that the dot temperature controls the direction of phonon heat currents, thereby influencing the thermoelectric performance. Finally, the conditions on the maximum efficiency with varying phonon couplings between the dot and all the other macroscopic bodies are analyzed in order to reveal the nature of the optimum junction.

preprint2016arXiv

Ultra-sensitive nanoscale magnetic field sensors based on resonant spin filtering

Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose sensor structures based on the magneto-resistance physics of resonant spin-filtering and present device designs catered toward exceptional magnetic field sensing capabilities. Using the non-equilibrium Green's function spin transport formalism self consistently coupled to the Poisson's equation, we present highly-tunable pentalayer magnetic tunnel junction structures that are capable of exhibiting an ultra-high peak tunnel magneto resistance $(\approx 2500 \%$). We show how this translates to device designs featuring an ultra-high current sensitivity enhancement of over 300\% in comparison with typical trilayer MTJ sensors, and a wider tunable range of field sensitivity. We also demonstrate that a dynamic variation in sensor functionalities with the structural landscape enables a superior design flexibility over typical trilayer sensors. An optimal design exhibiting close to a 700\% sensitivity increase as a result of angle dependent spin filtering is then presented.This work sets a stage to engineer spintronic building blocks via the design of functional structures tailored to exhibit ultra-sensitive spin filtering.

preprint2015arXiv

Exploring Packaging Strategies of Nano-embedded Thermoelectric Generators

Embedding nanostructures within a bulk matrix is an important practical approach towards the electronic engineering of high performance thermoelectric systems. For power generation applications, it ideally combines the efficiency benefit offered by low dimensional systems along with the high power output advantage offered by bulk systems. In this work, we uncover a few crucial details about how to embed nanowires and nanoflakes in a bulk matrix so that an overall advantage over pure bulk may be achieved. First and foremost, we point out that a performance degradation with respect to bulk is inevitable as the nanostructure transitions to being multi moded. It is then shown that a nano embedded system of suitable cross-section offers a power density advantage over a wide range of efficiencies at higher packing fractions, and this range gradually narrows down to the high efficiency regime, as the packing fraction is reduced. Finally, we introduce a metric - \emph{the advantage factor}, to elucidate quantitatively, the enhancement in the power density offered via nano-embedding at a given efficiency. In the end, we explore the maximum effective width of nano-embedding which serves as a reference in designing generators in the efficiency range of interest.

preprint2015arXiv

Optimal Single Quantum Dot Heat-to-pure-spin-current Converters

We delve into the conditions under which a quantum dot thermoelectric setup may be tuned to realize an optimal heat-to-pure-spin-current converter. It is well known that a heat-to-pure-spin-current converter may be realized using a non-interacting quantum dot with a spin-split energy spectrum under particle hole symmetry conditions. However, with the inclusion of Coulomb interaction $U$, ubiquitous in typical quantum dot systems, the relevant transport physics is expected to be altered. In this work, we provide a detailed picture of thermoelectric pure spin currents at various Coulomb interaction parameters $U$ and describe the conditions necessary for an exact cancellation of charge transport between energy levels $ε$ and their Coulomb-charged partner levels $ε+U$, so as to yield the largest terminal pure spin currents. A non-trivial aspect pointed out here is that at sufficiently large values of $U$ ($\ge U_0$), pure spin currents tend to optimize at points other than where the particle-hole symmetry occurs. It is also ascertained that a global maximum of pure spin current is generated at a typical value of the interaction parameter $U$. These optimum conditions may be easily realized using a typical gated quantum dot thermoelectric transport setup

preprint2015arXiv

Programming current reduction via enhanced asymmetry-induced thermoelectric effects in vertical nanopillar phase change memory cells

Thermoelectric effects are envisioned to reduce programming currents in nanopillar phase change memory cells. However, due to the inherent symmetry in such a structure, the contribution due to thermoelectric effects on programming currents is minimal. In this work, we propose a hybrid phase change memory structure which incorporates a two-fold asymmetry specifically aimed to favorably enhance thermoelectric effects. The first asymmetry is introduced via an interface layer of low thermal conductivity and high negative Seebeck coefficient, such as, polycrystalline SiGe, between the bottom electrode contact and the active region comprising the phase change material. This results in an enhanced Peltier heating of the active material. The second one is introduced structurally via a taper that results in an angle dependent Thomson heating within the active region. Various device geometries are analyzed using 2D-axis-symmetric simulations to predict the effect on programming currents as well as for different thicknesses of the interface layer. A programming current reduction of up to $60\%$ is predicted for specific cell geometries. Remarkably, we find that due to an interplay of Thomson cooling in the electrode and the asymmetric heating profile inside the active region, the predicted programming current reduction is resilient to fabrication variability.

preprint2015arXiv

Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents

We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.

preprint2014arXiv

Enhancement of Spin-transfer torque switching via resonant tunneling

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

preprint2014arXiv

Power and efficiency analysis of a realistic resonant tunneling diode thermoelectric

Low-dimensional systems with sharp features in the density of states have been proposed as a means to improving the efficiency of thermoelectric devices. Quantum dot systems, which offer the sharpest density of states achievable, however, suffer from low power outputs while bulk (3-D) thermoelectrics, while displaying high power outputs, offer very low efficiencies. Here, we analyze the use of a resonant tunneling diode structure that combines the best of both aspects, that is, density of states distortion with a finite bandwidth due to confinement that aids the efficiency and a large number of current carrying transverse modes that enhances the total power output. We show that this device can achieve a high power output ($\sim 0.3$ MW$/m^2$) at efficiencies of $\sim 40\%$ of the Carnot efficiency due to the contribution from these transverse momentum states at a finite bandwidth of $kT/2$. We then provide a detailed analysis of the physics of charge and heat transport with insights on parasitic currents that reduce the efficiency. Finally, a comparison between the resonant tunneling diode and a quantum dot device with comparable bandwidth reveals that a similar performance requires ultra-dense areal quantum dot densities of $\sim 10^{12}/cm^2$.

preprint2014arXiv

Role of dual nuclear baths on spin blockade leakage current bistabilities

Spin-blockaded electronic transport across a double quantum dot (DQD) system represents an important advancement in the area of spin-based quantum information. The basic mechanism underlying the blockade is the formation of a blocking triplet state. The bistability of the leakage current as a function of the applied magnetic field in this regime is believed to arise from the effect of nuclear Overhauser fields on spin-flip transitions between the blocking triplet and the conducting singlet states. The objective of this paper is to present the nuances of considering a two bath model on the experimentally observed current bistability by employing a self consistent simulation of the nuclear spin dynamics coupled with the electronic transport of the DQD set up. In doing so, we first discuss the important subtleties involved in the microscopic derivation of the hyperfine mediated spin flip rates. We then give insights as to how the differences between the two nuclear baths and the resulting difference Overhauser field affect the two-electron states of the DQD, and their connection with the experimentally observed current hysteresis curve.

preprint2013arXiv

Thermoelectric spin accumulation and long-time spin precession in a non-collinear quantum dot spin valve

We explore thermoelectric spin transport and spin dependent phenomena in a non-collinear quantum dot spin valve set up. Using this set up, we demonstrate the possibility of a thermoelectric excitation of single spin dynamics inside the quantum dot. Many-body exchange fields generated on the single spins in this set up manifest as effective magnetic fields acting on the net spin accumulation in the quantum dot. We first identify generic conditions by which a zero bias spin accumulation in the dot may be created in the thermoelectric regime. The resulting spin accumulation is then shown to be subject to a field-like spin torque due to the effective magnetic field associated with either contact. This spin torque that is generated may yield long-time precession effects due to the prevailing blockade conditions. The implications of these phenomena in connection with single spin manipulation and pure spin current generation are then discussed.

preprint2012arXiv

Performance analysis of an interacting quantum dot thermoelectric system

We analyze the nanocaloritronic performance of an interacting quantum dot that is subject to an applied bias and an applied temperature gradient. It is now well known that, in the absence of phonon contribution, a weakly coupled non-interacting quantum dot can operate at thermoelectric efficiencies approaching the Carnot limit. However, it has also been recently pointed out that such peak efficiencies can only be achieved when operated in the reversible limit, with a vanishing current and hence a vanishing power output. In this paper, we point out three fundamental results affecting the thermoelectric performance due to the inclusion of Coulomb interactions: a) The reversible operating point carries zero efficiency, b) operation at finite power output is possible even at peak efficiencies approaching the Carnot value, and c) the evaluated trends of the the maximum efficiency deviate considerably from the conventional {\it{figure of merit}} $zT$ based result. Finally, we also analyze our system for thermoelectric operation at maximum power output.