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Bhaskaran Muralidharan

Bhaskaran Muralidharan contributes to research discovery and scholarly infrastructure.

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Published work

15 published item(s)

preprint2026arXiv

Image Synthesis Using Spintronic Deep Convolutional Generative Adversarial Network

The computational requirements of generative adversarial networks (GANs) exceed the limit of conventional Von Neumann architectures, necessitating energy efficient alternatives such as neuromorphic spintronics. This work presents a hybrid CMOS-spintronic deep convolutional generative adversarial network (DCGAN) architecture for synthetic image generation. The proposed generative vision model approach follows the standard framework, leveraging generator and discriminators adversarial training with our designed spintronics hardware for deconvolution, convolution, and activation layers of the DCGAN architecture. To enable hardware aware spintronic implementation, the generator's deconvolution layers are restructured as zero padded convolution, allowing seamless integration with a 6-bit skyrmion based synapse in a crossbar, without compromising training performance. Nonlinear activation functions are implemented using a hybrid CMOS domain wall based Rectified linear unit (ReLU) and Leaky ReLU units. Our proposed tunable Leaky ReLU employs domain wall position coded, continuous resistance states and a piecewise uniaxial parabolic anisotropy profile with a parallel MTJ readout, exhibiting energy consumption of 0.192 pJ. Our spintronic DCGAN model demonstrates adaptability across both grayscale and colored datasets, achieving Fr'echet Inception Distances (FID) of 27.5 for the Fashion MNIST and 45.4 for Anime Face datasets, with testing energy (training energy) of 4.9 nJ (14.97~nJ/image) and 24.72 nJ (74.7 nJ/image).

preprint2023arXiv

Giant excitonic magneto-optical Faraday rotation in single semimagnetic CdTe/Cd_{1-x}Mn_{x}Te quantum ring

Magnetic tuning of the bound exciton states and corresponding giant Zeeman splitting (GZS) between σ^{+} and σ^{-} excitonic transitions in CdTe/Cd_{1-x}Mn_{x}Te quantum ring has been investigated in the Faraday configuration for various concentrations of Mn^{2+} ions, using the variational technique in the effective mass approximation. The sp-d exchange interaction between the localized magnetic impurity ions and the delocalized charge carriers has been accounted via mean-field theory with the inclusion of a modified Brillouin function. The enhancement of the GZS, and in turn, the effective g-factor with the application of an external magnetic field, is strikingly manifested in type-I - type-II transition in the band structure, which has been well explained by computing the overlap integral between the electron and hole, and the in-plane exciton radius. This highlights the extraordinary magneto-optical properties, including the giant Faraday rotation and associated Verdet constant, which have been calculated using single oscillator model. The oscillator strength and exciton lifetime have been estimated, and are found to be larger than in the bulk diluted magnetic semiconductors (DMS) and quantum wells, reflecting stronger confinement inside the quantum ring. The results show that the DMS-based quantum ring exhibits more extensive Zeeman splitting, which gives rise to ultra-high Verdet constant of 2.6 \times 10^{9}rad/Tesla/m, which are a few orders of magnitude larger than in the existing quantum systems and magneto-optical materials.

preprint2022arXiv

Electrical and magneto transport in 2D semiconducting MXene Ti2CO2

The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and concentration, ranging from 0.2 to around 1.3 for weak magnetic fields. The electrical transport was modelled primarily using three scattering mechanisms: piezoelectric scattering, acoustic scattering, and polar optical phonons. Even though the mobility in this material is primarily limited by acoustic phonons, piezoelectric scattering also plays an important role which was not highlighted earlier.

preprint2022arXiv

Exciton magnetic polaron in CdTe/Cd_{1-x}Mn_{x}Te semimagnetic quantum ring

Magnetically doped nanostructures can significantly enhance the interaction between the band carriers and the dopant atoms. Motivated by the demonstration of the enhanced sp-d exchange interaction in quantum confined structures with the increased stability of the exciton magnetic polaron (EMP), we report the quantitative and qualitative analyses of the EMP formation in CdTe/Cd_{1-x}Mn_{x}Te diluted magnetic quantum ring (QR). The QR with two different configurations: (i) the non-magnetic ring (CdTe) embedded in the semimagnetic Cd_{1-x}Mn_{x}Te matrix, and (ii) magnetically non-uniform quantum structures embedded with Mn2+ ions both in the ring and in the barrier regimes, have been investigated for various mole fractions of the Mn dopants. The larger polaron binding energy (EMP) of 23meV is estimated for the 5% molar Mn contents compared to the other quantum confined systems made of CdMnTe. The magnetic field dependence of the MP energy and the corresponding polaron parameters like exchange field, localization radius of the MP, and the degree of circular polarization induced by the external applied magnetic field at T = 4.2K have been derived. The obtained results are in excellent agreement with the trend of the significant degradation of EMP in an external magnetic field, and with the contradictory tendencies of EMP for the QR with configuration (i) and (ii), as reported from the time-integrated measurements based on selective excitation for the quantum systems made of CdMnTe and other DMS materials.

preprint2022arXiv

Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator phase. Investigating workable device structures, we uncover fundamental sub-threshold limits posed by the gating mechanism that effectuates such a transition, thereby emphasizing the need for innovations on materials and device structures. Detailing the complex band translation physics related to the quantum spin Hall effect phase transition, it is shown that a gating strategy to beat the thermionic limit can be engineered at the cost of sacrificing the dissipationless ON-state conduction. It is then demonstrated that an out-of-plane antiferromagnetic exchange introduced in the material via proximity coupling can incite transitions between the quantum spin-valley Hall and the spin quantum anomalous Hall phase, which can ultimately ensure the topological robustness of the ON state while surpassing the thermionic limit. Our work thus underlines the operational criteria for building topological transistors using quantum materials that can overcome the Boltzmann's tyranny while preserving the topological robustness.

preprint2022arXiv

Silicene for flexible electronics

The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoretical model derived from the integration of \textit{ab-initio} density-functional theory and quantum transport theory, we investigate the piezoresistance effect of silicene in the nanoscale regime. Like graphene, we obtain a small value of piezoresistance gauge factor of silicene, which is sinusoidally dependent on the transport angle. The small gauge factor of silicene is attributed to its robust Dirac cone and strain-independent valley degeneracy. Based on the obtained results, we propose to use silicene as an interconnect in flexible electronic devices and a reference piezoresistor in strain sensors. This work will hence pave the way for exploring flexible electronics applications in other 2D-Xene materials.

preprint2021arXiv

Can non-local conductance spectra conclusively signal Majorana zero modes? -- Insights from von Neumann entropy

The topological origin of the zero bias conductance signatures obtained via conductance spectroscopy in topological superconductor hybrid systems is a much contended issue. Recently, non-local conductance signatures that exploit the non-locality of the zero modes in three terminal hybrid setups have been proposed as means to ascertain the definitive presence of Majorana modes. The topological entanglement entropy, which is based on the von Neumann entropy, is yet another way to gauge the non-locality in connection with the bulk-boundary correspondence of a topological phase. We show that while both the entanglement entropy and the non-local conductance exhibit a clear topological phase transition signature for long enough pristine nanowires, non-local conductance fails to signal a topological phase transition for shorter disordered wires. While recent experiments have indeed shown premature gap-closure signatures in the non-local conductance spectra, we believe that the entanglement entropy can indeed signal a genuine transition, regardless of the constituent non-idealities in an experimental situation. Our results thereby point toward furthering the development of experimental techniques beyond conductance measurements to achieve a conclusive detection of Majorana zero modes.

preprint2021arXiv

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

In pursuit of designing superior type-II superlattice barrier infrared detectors, this study encompasses an exhaustive analysis of utilizing M-structured superlattices for both the absorber and barrier layers through proper band engineering and discusses its potential benefits over other candidates. The electronic band properties of ideally infinite M-structures are calculated using the eight band $k.p$ method which takes into account the effects of both strain and microscopic interface asymmetry to primarily estimate the bandgap and density-of-states effective mass and their variation with respect to the thicknesses of the constituent material layers. In contrast, for practical finite-period structures, the local density-of-states and spectral tunneling transmission and current calculated using the Keldysh non-equilibrium Green's function approach with the inclusion of non-coherent scattering processes offer deep insights into the qualitative aspects of miniband and localization engineering via structural variation. Our key results demonstrate how to achieve a wide infrared spectral range, reduce tunneling dark currents, induce strong interband wavefunction overlaps at the interfaces for adequate absorption, and excellent band-tunability to facilitate unipolar or bipolar current blocking barriers. This study, therefore, perfectly exemplifies the utilization of 6.1 Angstrom material library to its full potential through the demonstration of band engineering in M-structured superlattices and sets up the right platform to possibly replace other complex superlattice systems for targeted applications.

preprint2021arXiv

Proposal for a solid-state magnetoresistive Larmor quantum clock

We propose a solid-state implementation of the Larmor clock that exploits tunnel magnetoresistance to distill information on how long itinerant spins take to traverse a barrier embedded in it. Keeping in mind that the tunnelling time innately involves pristine pre-selection and post-selection, our proposal takes into account the detrimental aspects of multiple reflections by incorporating multiple contacts, multiple current measurements and suitably defined magnetoresistance signals. Our analysis provides a direct mapping between the magnetoresistance signals and the tunneling times and aligns well with the interpretation in terms of generalized quantum measurements and quantum weak values. By means of an engineered pre-selection in one of the ferromagnetic contacts, we also elucidate how one can make the measurement "weak" by minimizing the back-action, while keeping the tunneling time unchanged. We then analyze the resulting interpretations of the tunneling time and the measurement back action in the presence of phase breaking effects that are intrinsic to solid state systems. We unravel that while the time-keeping aspect of the Larmor clock is reasonably undeterred due to momentum and phase relaxation processes, it degrades significantly in the presence of spin-dephasing. We believe that the ideas presented here also open up a fructuous solid state platform to encompass emerging ideas in quantum technology such as quantum weak values and its applications, that are currently exclusive to quantum optics and cold atoms.

preprint2021arXiv

Robust all-electrical topological valley filtering using monolayer 2D-Xenes

We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with conventional quantum spin-Hall edge states localized around the $X$-points, the interface states appearing at the domain wall between topologically distinct phases are either from the $K$ or $K^{'}$ points, making them suitable prospects for serving as valley-polarized channels. We show that the presence of a large band-gap quantum spin Hall effect enables the spatial separation of the spin-valley locked helical interface states with the valley states being protected by spin conservation, leading to a robustness against short-range non-magnetic disorder. By adopting the scattering matrix formalism on a suitably designed device structure, valley-resolved transport in the presence of non-magnetic short-range disorder for different 2D-Xene materials is also analyzed in detail. Our numerical simulations confirm the role of spin-orbit coupling in achieving an improved valley filter performance with a perfect quantum of conductance attributed to the topologically protected interface states. Our analysis further elaborates clearly the right choice of material, device geometry and other factors that need to be considered while designing an optimized valleytronic filter device.

preprint2020arXiv

AMMCR: Ab-initio model for mobility and conductivity calculation by using Rode Algorithm

We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derived from the Density Functional Theory (DFT). We have demonstrated good agreement with experimental results for the case of Cadmium Sulfide (CdS). We also provide a comparison with the widely used method, the so called Relaxation Time Approximation (RTA) and demonstrated the improvisation of the results compared to RTA. The present version of the module is interfaced with Vienna ab-initio simulation package (VASP).

preprint2020arXiv

Three terminal vibron coupled hybrid quantum dot thermoelectric refrigeration

A three terminal nanoscale refrigeration concept based on a vibron-coupled quantum dot hybrid system coupled to two electronic reservoirs and a phonon bath is proposed and analyzed in detail. While investigating the non-trivial role of electron-phonon interactions, we show that, although they are well known to be detrimental from a general refrigeration perspective, can be engineered to favorably improve the trade-off between the cooling power (CP) and the coefficient-of-performance (COP). Furthermore, an additional improvement in the trade-off can be facilitated by applying a high electronic thermal bias. However, the allowed maximum of the thermal bias being strongly limited by the electron-phonon coupling, in turn, determines the lowest achievable temperature of the cooled body. It is further demonstrated that such interactions drive a phonon flow between the dot and bath whose direction and magnitude depend on the temperature difference between the dot and bath. To justify its impact in optimizing the peak CP and COP, we show that a weak coupling with the bath is preferable when the phonons relax through it and a strong coupling is suitable in the opposite case when the phonons are extracted from the bath. Finally, in studying the effect of asymmetry in electronic couplings, we show that a stronger coupling is favorable with the contact whose temperature is closer to that of the bath. Combining these aspects, we believe that this study could offer important guidelines for a possible realization of molecular and quantum dot thermoelectric refrigerator.

preprint2019arXiv

Energy bandpass filtering in superlattice phase change memories

We propose energy bandpass filtering employed using the idea of anti-reflection heterostructures as a means to reduce the energy requirements of a superlattice phase change memory based on GeTe and Sb$_{2}$Te$_{3}$ heterostructures. Different configurations of GeTe/Sb$_{2}$Te$_{3}$ superlattices are studied using the non-equilibrium Green's function approach. Our electronic transport simulations calculate the coupling parameter for the high resistance covalent state, to $97 \%$ that of the stable low resistance resonant state, maintaining the ON/OFF ratio of 100 for a reliable read operation. By examining various configurations of the superlattice structures we conclude that the inclusion of anti-reflection units on both sides of the superlattice increases the overall ON/OFF ratio by an order of magnitude which can further help in scaling down of the memory device. It is also observed that the device with such anti-reflection units exhibits 32$\%$ lesser RESET voltage than the most common PCM superlattice configurations and 27$\%$ in the presence of elastic dephasing. Moreover, we also find that the ON/OFF ratios in these devices are also resilient to the variations in the periodicity of the superlattice.

preprint2019arXiv

Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields

We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit ($0\%$-$10\%$). The longitudinal and transverse gauge factors are identical along armchair and zigzag directions. Our model predicts a significant variation ($\approx 1000\% $ change) in transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is $\approx 0.3$ whereas the transverse gauge factor is $\approx -3.3$. We rationalize our prediction using deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain, leading to an inverse change in gauge factor. The results obtained herein may serve as a template for high strain piezoresistance effect of graphene in nano electromechanical systems.

preprint2019arXiv

Semi-classical electronic transport properties of ternary compound AlGaAs$_2$: Role of different scattering mechanisms

We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab-initio parameters. We consider AlGaAs2 to have two distinct crystal geometries, one in tetragonal phase (space group: ), while the other one having body centered tetragonal crystal structure (space group:). We have observed higher electron mobility in the body centered tetragonal phase, thereby making it more suitable for high mobility device application, over the tetragonal phase. In order to understand the differences in electron moblities for these two phases, curvatures of the E-k graph of the conduction bands for these phases have been compared. At room temperature, the dominant contribution in electron mobility was found to be provided by inelastic POP scattering. We have also noted that mobility is underestimated in relaxation time approximation as compared with the Rode's iterative approach.