Source author record

Ashwin Tulapurkar

Ashwin Tulapurkar appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
1topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2019arXiv

Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields

We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit ($0\%$-$10\%$). The longitudinal and transverse gauge factors are identical along armchair and zigzag directions. Our model predicts a significant variation ($\approx 1000\% $ change) in transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is $\approx 0.3$ whereas the transverse gauge factor is $\approx -3.3$. We rationalize our prediction using deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain, leading to an inverse change in gauge factor. The results obtained herein may serve as a template for high strain piezoresistance effect of graphene in nano electromechanical systems.

preprint2016arXiv

Ultra-sensitive nanoscale magnetic field sensors based on resonant spin filtering

Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose sensor structures based on the magneto-resistance physics of resonant spin-filtering and present device designs catered toward exceptional magnetic field sensing capabilities. Using the non-equilibrium Green's function spin transport formalism self consistently coupled to the Poisson's equation, we present highly-tunable pentalayer magnetic tunnel junction structures that are capable of exhibiting an ultra-high peak tunnel magneto resistance $(\approx 2500 \%$). We show how this translates to device designs featuring an ultra-high current sensitivity enhancement of over 300\% in comparison with typical trilayer MTJ sensors, and a wider tunable range of field sensitivity. We also demonstrate that a dynamic variation in sensor functionalities with the structural landscape enables a superior design flexibility over typical trilayer sensors. An optimal design exhibiting close to a 700\% sensitivity increase as a result of angle dependent spin filtering is then presented.This work sets a stage to engineer spintronic building blocks via the design of functional structures tailored to exhibit ultra-sensitive spin filtering.

preprint2015arXiv

Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents

We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme.