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Bernt Ketterer

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2011arXiv

Determination of the bandgap and split-off band of wurtzite GaAs

GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of GaAs wurtzite below 1.523 eV.

preprint2011arXiv

Phonon confinement and plasmon-phonon interaction in nanowire based quantum wells

Resonant Raman spectroscopy is realized on closely spaced nanowire based quantum wells. Phonon quantization consistent with 2.4 nm thick quantum wells is observed, in agreement with cross-section transmission electron microscopy measurements and photoluminescence experiments. The creation of a high density plasma within the quantized structures is demonstrated by the observation of coupled plasmon-phonon modes. The density of the plasma and thereby the plasmon-phonon interaction is controlled with the excitation power. This work represents a base for further studies on confined high density charge systems in nanowires.

preprint2010arXiv

Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots

Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium lowering the growth temperature does not have an effect in increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575°C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit extremely sharp luminescence.