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Researcher profile

Benjamin T. Zhou

Benjamin T. Zhou contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

7 published item(s)

preprint2026arXiv

Magnons in multiorbital Hubbard models, from Lieb to kagome

We investigate the magnetic orders and excitations in a half-filled Hubbard model that continuously interpolates between the Lieb and kagome lattices. Using self-consistent Hartree-Fock approximation combined with real-time two-particle response functions from the Bethe-Salpeter equation in the random phase approximation, we map the $U-t'$ phase diagram of the Lieb-kagome lattices, identifying the typical magnetic states and the corresponding magnetic excitation spectra. In addition to gapless Goldstone magnons, the ferrimagnetic and antiferromagnetic symmetry-broken phases also exhibit gapped Higgs magnon bands, which originate from amplitude fluctuations in the order parameter characterizing spontaneous symmetry breaking.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Moiré flat Chern bands and correlated quantum anomalous Hall states generated by spin-orbit couplings in twisted homobilayer MoS$_2$

We predict that in a twisted homobilayer of transition-metal dichalcogenide MoS$_2$, spin-orbit coupling in the conduction band states from $\pm K$ valleys can give rise to moiré flat bands with nonzero Chern numbers in each valley. The nontrivial band topology originates from a unique combination of angular twist and local mirror symmetry breaking in each individual layer, which results in unusual skyrmionic spin textures in momentum space with skyrmion number $\mathcal{S} = \pm 2$. Our Hartree-Fock analysis further suggests that density-density interactions generically drive the system at $1/2$-filling into a valley-polarized state, which realizes a correlated quantum anomalous Hall state with Chern number $\mathcal{C} = \pm 2$. Effects of displacement fields are discussed with comparison to nontrivial topology from layer-pseudospin magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS$_2$

Stacking order in van der Waals materials determines the coupling between atomic layers and is therefore key to the materials' properties. By exploring different stacking orders, many novel physical phenomena have been realized in artificial vdW stacks. Recently, 2D ferroelectricity has been observed in zero-degree aligned hBN and graphene-hBN heterostructures, holding promise in a range of electronic applications. In those artificial stacks, however, the single domain size is limited by the stacking-angle misalignment to about 0.1 to 1 $μ$m, which is incompatible with most optical or optoelectronic applications. Here we show MoS$_2$ in the rhombohedral phase can host a homogeneous spontaneous polarization throughout few-$μ$m-sized exfoliated flakes, as it is a natural crystal requiring no stacking and is, therefore free of misalignment. Utilizing this homogeneous polarization and its induced depolarization field (DEP), we build a graphene-MoS$_2$ based photovoltaic device with high efficiency. The few-layer MoS$_2$ is thinner than most oxide-based ferroelectric films, which allows us to maximize the DEP and study its impact at the atomically thin limit, while the highly uniform polarization achievable in the commensurate crystal enables a tangible path for up-scaling. The external quantum efficiency of our device is up to 16% at room temperature, over one order larger than the highest efficiency observed in bulk photovoltaic devices, owing to the reduced screening in graphene, the exciton-enhanced light-matter interaction, and the ultrafast interlayer relaxation in MoS$_2$. In view of the wide range of bandgap energy in other TMDs, our findings make rhombohedral TMDs a promising and versatile candidate for applications such as energy-efficient photo-detection with high speed and programmable polarity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Highly tunable nonlinear Hall effects induced by spin-orbit couplings in strained polar transition-metal dichalcogenides

Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T'/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures, Berry-curvature dipoles created by spin degrees of freedom lead to strong nonlinear Hall effects. Under an easily accessible uniaxial strain of order 0.2%, strong nonlinear Hall signals, characterized by a Berry-curvature dipole on the order of 1Å, arise in electron-doped polar TMDs such as MoSSe, and this is easily detectable experimentally. Moreover, the magnitude and sign of the nonlinear Hall current can be easily tuned by electric gating and strain. These properties can be used to distinguish nonlinear Hall effects from classical mechanisms such as ratchet effects. Importantly, our system provides a potential scheme for building electrically switchable energy-harvesting rectifiers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-orbit-parity coupled superconductivity in topological monolayer WTe$_2$

Recent experiments reported gate-induced superconductivity in the monolayer 1T$'$-WTe$_2$ which is a two-dimensional topological insulator in its normal state [1, 2]. The in-plane upper critical field $B_{c2}$ is found to exceed the conventional Pauli paramagnetic limit $B_p$ by 1-3 times. The enhancement cannot be explained by conventional spin-orbit coupling which vanishes due to inversion symmetry. In this work, we unveil some distinctive superconducting properties of centrosymmetric 1T$'$-WTe$_2$ which arise from the coupling of spin, momentum and band parity degrees of freedom. As a result of this spin-orbit-parity coupling: (i) there is a first-order superconductor-metal transition at $B_{c2}$ much higher than the Pauli paramagnetic limit $B_p$, (ii) spin-susceptibility is anisotropic with respect to in-plane directions and results in anisotropic $B_{c2}$ and (iii) the $B_{c2}$ exhibits a strong gate dependence as the spin-orbit-parity coupling is significant only near the topological band crossing points. The importance of SOPC on the topologically nontrivial inter-orbital pairing phase is also discussed. Our theory generally applies to centrosymmetric materials with topological band inversions.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strongly enlarged topological regime and enhanced superconducting gap in nanowires coupled to Ising superconductors

An external magnetic field is needed to drive a nanowire in proximity to an s-wave superconductor into a topological regime which supports Majorana end states. However, a magnetic field generally suppresses the proximity superconducting gap induced on the nanowire. In recent experiments using InSb nanowires coupled to Al, the induced proximity gap vanishes at magnetic fields B~1T. This results in a small superconducting gap on the wire and a narrow topological regime which is proportional to the strength of the magnetic field. In this work, we show that by placing nanowires in proximity to recently discovered Ising superconductors such as the atomically thin transition-metal dichalcogenide(TMD) NbSe2, the topological superconducting gap on the wire can maintain at a large magnetic field as strong as B~10T. This robust topological superconducting gap is induced by the unique equal-spin triplet Cooper pairs of the parent Ising superconductor. The strong magnetic field allows a topological regime ten times larger than those in InSb wires coupled to Al. Our work establishes a realistic platform for building robust Majorana-based qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Intrinsic valley Hall transport in atomically thin MoS2

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.

0 citations0 reviewsNo code linkedOpen access