Researcher profile

Benjamin P. L. Reid

Benjamin P. L. Reid contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Strong exciton-photon coupling with colloidal nanoplatelets in an open microcavity

Colloidal semiconductor nanoplatelets exhibit quantum size effects due to their thickness of only few monolayers, together with strong optical band-edge transitions facilitated by large lateral extensions. In this article we demonstrate room temperature strong coupling of the light and heavy hole exciton transitions of CdSe nanoplatelets with the photonic modes of an open planar microcavity. Vacuum Rabi splittings of $66 \pm 1$ meV and $58 \pm 1$ meV are observed for the heavy and light hole excitons respectively, together with a polariton-mediated hybridisation of both transitions. By measuring the concentration of platelets in the film we compute the transition dipole moment of a nanoplatelet exciton to be $μ= (575 \pm 110)$ D. The large oscillator strength and fluorescence quantum yield of semiconductor nanoplatelets provide a perspective towards novel photonic devices, combining polaritonic and spinoptronic effects.

preprint2016arXiv

Two-dimensional Excitonic Photoluminescence in Graphene on Cu surface

Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum $\leq$ 3meV) and multiple emissions around 3.18 eV. As temperature increases, these emissions blue-shift, showing the characteristic negative thermal coefficient of graphene. Observed PLs originate from significantly suppressed dispersion of excited electrons in graphene caused by hybridization of graphene $π$ and Cu d orbitals of the 1st and 2nd Cu layers at a shifted saddle point 0.525(M+K) of Brillouin zone. This finding provides a new pathway to engineering novel optoelectronic graphene devices, whilst maintaining the outstanding electrical properties of graphene.

preprint2013arXiv

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.