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Benedikt Haas

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Published work

2 published item(s)

preprint2021arXiv

Increasing Spatial Fidelity and SNR of 4D-STEM using Multi-frame Data Fusion

4D-STEM, in which the 2D diffraction plane is captured for each 2D scan position in the scanning transmission electron microscope (STEM) using a pixelated detector, is complementing and increasingly replacing existing imaging approaches. However, at present the speed of those detectors, although having drastically improved in the recent years, is still 100 to 1,000 times slower than the current PMT technology operators are used to. Regrettably, this means environmental scanning-distortion often limits the overall performance of the recorded 4D data. Here we present an extension of existing STEM distortion correction techniques for the treatment of 4D-data series. Although applicable to 4D-data in general, we use electron ptychography and electric-field mapping as model cases and demonstrate an improvement in spatial-fidelity, signal-to-noise ratio (SNR), phase-precision and spatial-resolution.

preprint2020arXiv

Two-dimensional Ga$_2$O$_3$ glass: a large scale passivation and protection material for monolayer WS$_2$

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, we show that the novel, ultrathin Ga$_2$O$_3$ glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga$_2$O$_3$ capping of commercial grade WS$_2$ monolayers outperforms hBN in both scalability and optical performance at room temperature. These properties make Ga$_2$O$_3$ highly suitable for large scale passivation and protection of monolayer TMDCs in functional heterostructures.