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Bence Hetényi

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Published work

2 published item(s)

preprint2022arXiv

Crossed Andreev reflection in spin-polarized chiral edge states due to the Meissner effect

We consider a hybrid quantum Hall-superconductor system, where a superconducting finger with oblique profile is wedged into a two-dimensional electron gas in the presence of a perpendicular magnetic field, as considered by Lee et al., Nat. Phys. 13, 693 (2017). The electron gas is in the quantum Hall regime at filling factor $ν=1$. Due to the Meissner effect, the perpendicular magnetic field close to the quantum Hall-superconductor boundary is distorted and gives rise to an in-plane component of the magnetic field. This component enables nonlocal crossed Andreev reflection between the spin-polarized chiral edge states running on opposite sides of the superconducting finger, thus opening a gap in the spectrum of the edge states without the need of spin-orbit interaction or nontrivial magnetic textures. We compute numerically the transport properties of this setup and show that a negative resistance exists as a consequence of nonlocal Andreev processes. We also obtain numerically the zero-energy local density of states, which systematically shows peaks stable to disorder. The latter result is compatible with the emergence of Majorana bound states.

preprint2020arXiv

Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors

We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that is conserved even in highly anisotropic semiconductors, provided that the system has a twofold symmetry with respect to the direction of the applied magnetic field. This finding facilitates the definition of qubit basis states and simplifies the form of exchange interaction for two-qubit gates in coupled quantum dots. If the magnetic field is applied along a generic direction, cubic anisotropy terms act as an effective spin-orbit interaction introducing novel exchange couplings even for an inversion symmetric setup. Considering the example of a silicon nanowire double dot, we present the relative strength of these anisotropic exchange interaction terms and calculate the fidelity of the $\sqrt{\text{SWAP}}$ gate. Furthermore, we show that the anisotropy-induced spin-orbit effects can be comparable to that of the direct Rashba spin-orbit interaction for experimentally feasible electric field strengths.