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Researcher profile

Behtash Behin-Aein

Behtash Behin-Aein contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciNeurons and Cognitionquant-ph

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Published work

10 published item(s)

preprint2016arXiv

A building block for hardware belief networks

Belief networks represent a powerful approach to problems involving probabilistic inference, but much of the work in this area is software based utilizing standard deterministic hardware based on the transistor which provides the gain and directionality needed to interconnect billions of them into useful networks. This paper proposes a transistor like device that could provide an analogous building block for probabilistic networks. We present two proof-of-concept examples of belief networks, one reciprocal and one non-reciprocal, implemented using the proposed device which is simulated using experimentally benchmarked models.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin switches for compact implementation of neuron and synapse

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network (HNN) implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert (LLG) equations, one for each magnet in the network.

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preprint2014arXiv

Computing with spins and magnets

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

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preprint2014arXiv

Modeling Multi-Magnet Networks Interacting Via Spin Currents

The significant experimental advances of the last few decades in dealing with the interaction of spin currents and nanomagnets, at the device level, has allowed envisioning a broad class of devices that propose to implement information processing using spin currents and nanomagnets. To analyze such spin-magnet logic circuits, in general, we have developed a coupled spin-transport/ magnetization-dynamics simulation framework that could be broadly applicable to various classes of spin-valve/ spin-torque devices. Indeed, the primary purpose of this chapter is to describe in detail, the overall approach we have developed to include a description of spin transport coupled with magnetization dynamics and to show how it was benchmarked against available data on experiments. We address non-collinear spin-transport in Section-2 using a lumped "4-component spin-circuit formalism" that describes the interaction of non-collinear magnets (required for modeling spin torque), by computing 4-component currents and voltages at every node of a "circuit". For modeling the magnetization dynamics, we use the standard Landau-Lifshitz-Gilbert (LLG) equation with the Slonczewski and the field-like terms included for spin torque. Section-3 describes how this LLG model is coupled with the spin transport model to analyze spin-torque experiments and spin-magnet circuits in general. We include MATLAB codes in the Appendix to facilitate a "hands-on" understanding of our model and hope it will enable interested readers to conveniently analyze their own experiments, develop a deeper insight into spin-magnet circuits or come up with their own creative designs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

What constitutes a nanoswitch? A Perspective

Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto magnets. Many other new phenomena are being investigated for nano-electronic memory as described in Part II of this book. It seems natural to ask whether these advances in memory devices could also translate into a new class of logic devices. What makes logic devices different from memory is the need for one device to drive another and this calls for gain, directionality and input-output isolation as exemplified by the transistor. With this in mind we will try to present our perspective on how W and R devices in general, spintronic or otherwise, could be integrated into transistor-like switches that can be interconnected to build complex circuits without external amplifiers or clocks. We will argue that the most common switch used to implement digital logic based on complementary metal oxide semiconductor (CMOS) transistors can be viewed as an integrated W-R unit having an input-output asymmetry that give it gain and directionality. Such a viewpoint is not intended to provide any insight into the operation of CMOS switches, but rather as an aid to understanding how W and R units based on spins and magnets can be combined to build transistor-like switches. Next we will discuss the standard W and R units used for magnetic memory devices and present one way to integrate them into a single unit with the input electrically isolated from the output. But we argue that this integrated W-R unit would not provide the key property of gain. We will then show that the recently discovered giant spin Hall effect could be used to construct a W-R unit with gain and suggest other possibilities for spin switches with gain.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices

Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy and time. Application of this approach to a wide class of charge-based and non-charge based devices is discussed. The approach suggests pathways for improving the performance of beyond-CMOS devices and a new realistic limit for energy-delay product in terms of the Planks constant.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-volatile Spin Switch for Boolean and Non-Boolean Logic

We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation, gain and fan-out similar to CMOS inverters, but with the information stored in nanomagnets making it non-volatile. Such spin switches could be interconnected, with no external amplification, just with passive circuit elements, to perform logic operations. Moreover, since the digitization and storage occurs naturally in the magnets, the voltages can be used to implement analog weighting for non-Boolean logic.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

All Spin Logic device with inbuilt Non-Reciprocity

The need for low power alternatives to digital electronic circuits has led to increasing interest in logic devices where information is stored in nanomagnets. This includes both nanomagnetic logic (NML) where information is communicated through magnetic fields of nanomagnets and all-spin logic (ASL) where information is communicated through spin currents. A key feature needed for logic implementation is non-reciprocity, whereby the output is switched according to the input but not the other way around, thus providing directed information transfer. The objective of this paper is to draw attention to possible ASL-based schemes that utilize the physics of spin-torque to build in non-reciprocity similar to transistors that could allow logic implementation without the need for special clocking schemes. We use an experimentally benchmarked coupled spin-transport/ magnetization-dynamics model to show that a suitably engineered single ASL unit indeed switches in a non-reciprocal manner. We then present heuristic arguments explaining the origin of this directed information transfer. Finally we present simulations showing that individual ASL devices with inbuilt directionality can be cascaded to construct circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Switching energy-delay of all-spin logic devices

The need to find low power alternatives to digital electronic circuits has led to increasing interest in alternative switching schemes like the magnetic quantum cellular automata(MQCA) that store information in nanomagnets which communicate through their magnetic fields. A recent proposal called all spin logic (ASL) proposes to communicate between nanomagnets using spin currents which are spatially localized and can be conveniently routed. The objective of this paper is to present a model for ASL devices that is based on established physics and is benchmarked against available experimental data and to use it to investigate switching energy-delay of ASL devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Voltage Asymmetry of Spin-Transfer Torques

We present a Non-Equilibrium Green's Function based model for spin torque transfer (STT) devices which provides quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque and (4) out-of-plane torque over a range of bias voltages, using a single set of three adjustable parameters. We believe this is the first theoretical model that is able to cover this diverse range of experiments and a key aspect of our model is the inclusion of multiple transverse modes. We also provide a simple explanation for the asymmetric bias dependence of the in-plane torque, based on the polarization of the two contacts in energy range of transport.

0 citations0 reviewsNo code linkedOpen access