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Researcher profile

Behrad Gholipour

Behrad Gholipour contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticscond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2018arXiv

Femtosecond laser inscription of nonlinear photonic circuits in Gallium Lanthanum Sulphide glass

We report on femtosecond laser writing of single mode optical waveguides in chalcogenide Gallium Lanthanum Sulphide (GLS) glass. A multiscan fabrication process was employed to create waveguides with symmetric single mode guidance and low insertion losses at 800 nm wavelength, compatible with Ti:Sapphire ultrafast lasers. μRaman and X-Ray microanalysis were used to elucidate the origin of the laser-induced refractive index change in GLS. Nonlinear refractive index measurements of the waveguides were performed by finding the optical switching parameters of a directional coupler, demonstrating that the nonlinear properties were preserved, evidencing that GLS is a promising platform for laser-written integrated nonlinear photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optically Reconfigurable Photonic Devices

Optoelectronic components with adjustable parameters, from variable-focal-length lenses to spectral filters that can change functionality upon stimulation, have enormous technological importance. Tuning of such components is conventionally achieved by either micro- or nano-mechanical actuation of their consitutive parts, stretching or application of thermal stimuli. Here we report a new dielectric metasurface platform for reconfigurable optical components that are created with light in a non-volatile and reversible fashion. Such components are written, erased and re-written as two-dimensional binary or grey-scale patterns into a nanoscale film of phase change material by inducing a refractive-index-changing phase-transition with tailored trains of femtosecond pulses. We combine germanium-antimony-tellurium-based films optimized for high-optical-contrast ovonic switching with a sub-wavelength-resolution optical writing process to demonstrate technologically relevant devices: visible-range reconfigurable bi-chromatic and multi-focus Fresnel zone-plates, a super-oscillatory lens with sub-wavelength focus, a grey-scale hologram and a dielectric metamaterial with on-demand reflcetion and transmission resonances.

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preprint2014arXiv

n-Type Chalcogenides by Ion Implantation

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb doping concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

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