Researcher profile

Beata M. Szydłowska

Beata M. Szydłowska contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Photophysical comparison of liquid and mechanically exfoliated WS$_2$ monolayers

Semiconducting transition metal dichalcogenides (TMDs) are desired as active materials in optoelectronic devices due to their strong excitonic effects. They can be exfoliated from their parent layered materials with low-cost and for mass production via a liquid exfoliation method. However, the device application of TMDs prepared by liquid phase exfoliation is limited by their poor photoluminescence quantum efficiencies (PLQE). It is crucial to understand the reason to low PLQE for their practical device development. Here we evaluate the quality of monolayer-enriched liquid phase exfoliated (LPE) WS$_2$ dispersions by systematically investigating their optical and photophysical properties and contrasting with mechanically exfoliated (ME) WS2 monolayers. An in-depth understanding of the exciton dynamics is gained with ultrafast pump-probe measurements. We reveal that the energy transfer between monolayer and few-layers in LPE WS$_2$ dispersions is a substantial reason for their quenched PL. In addition, we show that LPE WS$_2$ is promising to build high performance optoelectronic devices with excellent optical quality.

preprint2020arXiv

Spectroscopic thickness and quality metrics for PtSe$_2$ layers produced by top-down and bottom-up techniques

Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe$_2$, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave bulk crystals down to mono- and few-layers, a range of growth techniques have been established producing material of varying quality and layer number. However, to date, no reliable high-throughput characterization to assess layer number exists. Here, we use top-down liquid phase exfoliation (LPE) coupled with centrifugation to produce widely basal plane defect-free PtSe$_2$ nanosheets of varying sizes and thicknesses. Quantification of the lateral dimensions by statistical atomic force microscopy allows us to quantitatively link information contained in optical spectra to the dimensions. For LPE nanosheets we establish metrics for lateral size and layer number based on extinction spectroscopy. Further, we compare the Raman spectroscopic response of LPE nanosheets with micromechanically exfoliated PtSe$_2$, as well as thin films produced by a range of bottom up techniques. We demonstrate that the Eg1 peak position and the intensity ratio of the Eg1/ A1g1 peaks can serve as robust metric for layer number across all sample types and will be of importance in future benchmarking of PtSe$_2$ films.