BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Bart Roose

Bart Roose contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mtrl-scicond-mat.softphysics.optics

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

Charge Transport in Mixed Metal Halide Perovskite Semiconductors

Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectronic device operation. Here, we address both these challenges and demonstrate that field-effect transistors (FETs) based on methylammonium-free, mixed-metal (Pb/Sn) perovskite compositions, that are widely studied for solar cell and light-emitting diode applications, do not suffer from ion migration effects as their pure Pb counterparts and reliably exhibit hysteresis free p-type transport with high mobility reaching 5.4 $cm^2/Vs$, ON/OFF ratio approaching $10^6$, and normalized channel conductance of 3 S/m. The reduced ion migration is also manifested in an activated temperature dependence of the field-effect mobility with low activation energy, which reflects a significant density of shallow electronic defects. We visualize the suppressed in-plane ionic migration in Sn-containing perovskites compared to their pure-Pb counterparts using photoluminescence microscopy under bias and demonstrate promising voltage and current-stress device operational stabilities. Our work establishes FETs as an excellent platform for providing fundamental insights into the doping, defect and charge transport physics of mixed-metal halide perovskite semiconductors to advance their applications in optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite

Tandem perovskite solar cells beckon as lower cost alternatives to conventional single junction solar cells, with all-perovskite tandem photovoltaic architectures showing power conversion efficiencies up to 26.4%. Solution-processing approaches for the perovskite layers have enabled rapid 2optimization of perovskite solar technologies, but new deposition routes are necessary to enable modularity and scalability, facilitating further efficiency improvements and technology adoption. Here, we utilise a 4-source vacuum deposition method to deposit FA$_{0.7}$ Cs$_{0.3}$Pb(I$_x$Br$_{1-x}$)$_3$ perovskite, where the bandgap is widened through fine control over the halide content. We show how the combined use of a MeO-2PACz self-assembled monolayer as hole transporting material and passivation of the perovskite absorber with ethylenediammonium diiodide reduces non-radiative losses, with this dual-interface treatment resulting in efficiencies of 17.8% in solar cells based on vacuum deposited perovskites with bandgap of 1.76 eV. By similarly passivating a narrow bandgap FA$_{0.75}$Cs$_{0.25}$Pb$_{0.5}$Sn$_{0.5}$I$_3$ perovskite and combining it with sub-cells of evaporated FA$_{0.7}$Cs$_{0.3}$Pb(I$_{0.64}$Br$_{0.36}$)$_3$, we report a 2-terminal all-perovskite tandem solar cell with champion open circuit voltage and power conversion efficiency of 2.06 V and 24.1%, respectively. The implementation of our dry deposition method enables high reproducibility in complex device architectures, opening avenues for modular, scalable multi-junction devices where the substrate choice is unrestricted.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices

Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has been hampered by the lack of suitable p-type buffer layers. In this work we develop a p-type CuOx buffer layer, which can be grown uniformly over the perovskite device without damaging the perovskite or organic charge transport layers, can be grown using industrially scalable techniques and has high hole mobility (4.3 +/- 2 cm2 V-1 s-1), high transmittance (>95%), and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV). Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOx buffer layer. Our work demonstrates a new approach to integrate PSCs into tandem configurations, as well as enable the development of other devices that need high quality p-type layers.

0 citations0 reviewsNo code linkedOpen access