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Source author record

Barbaros Ozyilmaz

Barbaros Ozyilmaz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

9 published item(s)

preprint2020arXiv

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Controlling many-body states by the electric-field effect in a two-dimensional material

To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control of many body states in strongly correlated electron systems is fundamental to the next generation of condensed matter research and devices. However, the material must be thin enough to avoid shielding of the electric field in bulk material. Two-dimensional materials do not experience electrical screening, and their charge carrier density can be controlled by gating. 1T TiSe2 is a prototypical 2D material that shows charge density wave(CDW) and superconductivity in its phase diagram, presenting several similarities with other layered systems such as copper oxides, iron pnictides, crystals of rare-earth and actinide atoms. By studying 1T TiSe2 single crystals with thicknesses of 10 nm or less, encapsulated in 2D layers of hexagonal boron nitride, we achieve unprecedented control over the CDW transition temperature, tuned from 170 K to 40 K, and over the superconductivity transition temperature, tuned from a quantum critical point at 0 K up to 3 K. Electrically driving TiSe2 over different ordered electronic phases allows us to study the details of the phase transitions between many-body states. Observations of periodic oscillations of magnetoresistance induced by the Little Parks effect show that the appearance of superconductivity is directly correlated to the spatial texturing of the amplitude and phase of the superconductivity order parameter, corresponding to a 2D matrix of superconductivity. We infer that this superconductivity matrix is supported by a matrix of incommensurate CDW states embedded in the commensurate CDW states. Our results show that spatially modulated electronic states are fundamental to the appearance of 2D superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced spin-orbit coupling in dilute fluorinated graphene

The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is only in the order of few ueV, which makes it almost impossible to be used as an active element in future electric field controlled spintronics devices. This stimulates the development of a systematic method for extrinsically enhancing the SOC of graphene. In this letter, we study the strength of SOC in weakly fluorinated graphene devices. We observe high non-local signals even without applying any external magnetic field. The magnitude of the signal increases with increasing fluorine adatom coverage. From the length dependence of the non-local transport measurements, we obtain SOC values of ~ 5.1 meV and ~ 9.1 meV for the devices with ~ 0.005% and ~ 0.06% fluorination, respectively. Such a large enhancement, together with the high charge mobility of fluorinated samples (u~4300 cm2/Vs - 2700 cm2/Vs), enables the detection of the spin Hall effect even at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Direct dry transfer of chemical vapor deposition graphene to polymeric substrates

We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and poly(vinylidenefluoride-co-trifluoroethylene) by means of only moderate heat and pressure, and the later mechanical peeling of the original graphene substrate. Simulations of the graphene-polymer interactions, rheological tests and graphene transfer at various experimental conditions show that controlling the graphene-polymer interface is the key to controlling graphene transfer. Raman spectroscopy and Optical Microscopy were used to identify and quantify graphene transferred to the polymer substrates. The results showed that the amount of graphene transferred to the polymer, from no-graphene to full graphene transfers, can be achieved by fine tuning the transfer conditions. As a result of the direct dry transfer technique, the graphene-polymer adhesion being stronger than graphene to Si/SiO2 wafer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors in Van der Waals heterostructures to preclude their stability and degradation problems which have limited their potential for applications. Introducing monolayer graphene in our device architecture for one-atom-thick conformal source-drain electrodes enables a chemically inert boron nitride dielectric to tightly seal the black phosphorus surface. This architecture, generally applicable for other sensitive two-dimensional crystals, results in stable transport characteristics which are hysteresis free and identical both under high vacuum and ambient conditions. Remarkably, our graphene electrodes lead to contacts not dominated by thermionic emission, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field effect transistor geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-Orbit Proximity Effect in Graphene

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of graphene. In this work, we create an artificial interface between monolayer graphene and few-layers semiconducting tungsten disulfide (WS2). We show that in such devices graphene acquires a SOC as high as 17meV, three orders of magnitude higher than its intrinsic value, without modifying any of the structural properties of the graphene. Such proximity SOC leads to the spin Hall effect even at room temperature and opens the doors for spin FETs. We show that intrinsic defects in WS2 play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transport properties of graphene with one-dimensional charge defects

We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr$_{0.3}$Ti$_{0.7}$)O$_{3}$ (PZT), we demonstrate ultra-low voltage operation of graphene field effect transistors within $\pm1$ V with maximum doping exceeding $10^{13}\,\mathrm{cm^{-2}}$ and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene field effect transistors with ferroelectric gating

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (nBG) provided by normal dielectric gating. More importantly, we prove that nBG can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric FETs with resistance change over 500% and reproducible no-volatile switching over 10^5 cycles.

0 citations0 reviewsNo code linkedOpen access