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Baile Chen

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Published work

2 published item(s)

preprint2019arXiv

Deep levels analysis in wavelength extended InGaAsBi photodetector

InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at Ec -0.33 eV, Ev +0.14 eV, and Ec -0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.

preprint2019arXiv

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 μm circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 um circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.