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Researcher profile

Babak Sadigh

Babak Sadigh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

4 published item(s)

preprint2026arXiv

Monte Carlo Simulations of Crystal Defects in Open Ensembles

Zero- and two-dimensional crystal defects form in open statistical ensembles, such as the grand canonical, that are usually inaccessible with conventional simulation techniques. This longstanding challenge is overcome with a new Hamiltonian Monte Carlo method that samples energy-biased gradual transformations. The method enables free energy calculations for nonideal point defects and the direct prediction of finite-temperature interface structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Self-Supervised Learning and Prediction of Microstructure Evolution with Recurrent Neural Networks

Microstructural evolution is a key aspect of understanding and exploiting the structure-property-performance relation of materials. Modeling microstructure evolution usually relies on coarse-grained simulations with evolution principles described by partial differential equations (PDEs). Here we demonstrate that convolutional recurrent neural networks can learn the underlying physical rules and replace PDE-based simulations in the prediction of microstructure phenomena. Neural nets are trained by self-supervised learning with image sequences from simulations of several common processes, including plane wave propagation, grain growth, spinodal decomposition and dendritic crystal growth. The trained networks can accurately predict both short-term local dynamics and long-term statistical properties of microstructures and is capable of extrapolating beyond the training datasets in spatiotemporal domains and configurational and parametric spaces. Such a data-driven approach offers significant advantages over PDE-based simulations in time stepping efficiency and offers a useful alternative especially when the material parameters or governing PDEs are not well determined.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A first-principles study of co-doping in lanthanum bromide

Co-doping of Ce-doped LaBr$_3$ with Ba, Ca, or Sr improves the energy resolution that can be achieved by radiation detectors based on these materials. Here, we present a mechanism that rationalizes of this enhancement that on the basis of first principles electronic structure calculations and point defect thermodynamics. It is shown that incorporation of Sr creates neutral $V_\text{Br}$-Sr$_\text{La}$ complexes that can temporarily trap electrons. As a result, Auger quenching of free carriers is reduced, allowing for a more linear, albeit slower, scintillation light yield response. Experimental Stokes shifts can be related to different Ce$_\text{La}$-Sr$_\text{La}$-$V_\text{Br}$ triple complex configurations. Co-doping with other alkaline as well as alkaline earth metals is considered as well. Alkaline elements are found to have extremely small solubilities on the order of 0.1 ppm and below at 1000 K. Among the alkaline earth metals the lighter dopant atoms prefer interstitial-like positions and create strong scattering centers, which has a detrimental impact on carrier mobilities. Only the heavier alkaline earth elements combine matching ionic radii with sufficiently high solubilities. This provides a rationale for the experimental finding that improved scintillator performance is exclusively achieved using Sr, Ca, or Ba. The present mechanism demonstrates that co-doping of wide gap materials can provide an efficient means for managing charge carrier populations under out-of-equilibrium conditions. In the present case dopants are introduced that manipulate not only the concentrations but the electronic properties of intrinsic defects without introducing additional gap levels. This leads to the availability of shallow electron traps that can temporarily localize charge carriers, effectively deactivating carrier-carrier recombination channels. The principles of this ... [continued]

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A variational polaron self-interaction corrected total-energy functional for charge excitations in wide-band gap insulators

We conduct a detailed investigation of the polaron self-interaction (pSI) error in standard approximations to the exchange-correlation (XC) functional within density-functional theory (DFT). The pSI leads to delocalization error in the polaron wave function and energy, as calculated from the Kohn-Sham (KS) potential in the native charge state of the polaron. This constitutes the origin of the systematic failure of DFT to describe polaron formation in band insulators. It is shown that the delocalization error in these systems is, however, largely absent in the KS potential of the closed-shell neutral charge state. This leads to a modification of the DFT total-energy functional that corrects the pSI in the XC functional. The resulting pSIC-DFT method constitutes an accurate parameter-free {\it ab initio} methodology for calculating polaron properties in insulators at a computational cost that is orders of magnitude smaller than hybrid XC functionals. Unlike approaches that rely on parametrized localized potentials such as DFT+$U$, the pSIC-DFT method properly captures both site and bond-centered polaron configurations. This is demonstrated by studying formation and migration of self-trapped holes in alkali halides (bond-centered) as well as self-trapped electrons in an elpasolite compound (site-centered). The pSIC-DFT approach consistently reproduces the results obtained by hybrid XC functionals parametrized by DFT+$G_0W_0$ calculations. Finally, we generalize the pSIC approach to hybrid functionals, and show that in stark contrast to conventional hybrid calculations of polaron energies, the pSIC-hybrid method is insensitive to the parametrization of the hybrid XC functional. On this basis, we further rationalize the success of the pSIC-DFT approach.

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