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B. X. Wu

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Published work

2 published item(s)

preprint2011arXiv

Sign reversal of the Hall resistance in the mixed-state of La$_{1.89}$ Ce$_{0.11}$CuO$_{4}$ and La$_{1.89}$Ce$_{0.11}$(Cu$_{0.99}$Co$_{0.01}$)O$_{4} $ thin films

The transport properties of La$_{1.89}$Ce$_{0.11}$CuO$_{4}$(LCCO) and La$_{1.89}$Ce$_{0.11}$(Cu$_{0.99}$Co$_{0.01}$)O$_{4}$ (LCCO:Co) superconducting thin films are investigated. When the external field $\bf H$ is applied along the crystallographic c-axis, a double sign reversal of the Hall voltage in the mixed state of LCCO:Co thin films is observed whereas a single sign reversal is detected in LCCO. A double sign reversal of the Hall signal in LCCO can be recovered if the magnetic field is tilted away from the plane of the film. We find that the transition from one to two of the Hall sign reversal coincides with the change in the pinning from strong to weak. This temperature/field induced transition is caused either by the magnetic impurities in LCCO:Co or by the coupling between the pancake vortices and the in-plane Josephson vortices in LCCO. These results are in agreement with early theoretical and numerical predictions.

preprint2009arXiv

Thickness-induced insufficient oxygen reduction in La(2-x)CexCuO4 thin films

A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport measurements indicate that, with the increase of the film thickness (<100 nm), the residual resistivity increases and the Hall coefficient shifts in the negative direction. Further more, the X-ray diffraction data reveal that the c-axis lattice constant c0 increases with the decrease of film thickness. These abnormal phenomena can be attributed to the insufficient oxygen reduction in the thin films. Considering the lattice mismatching in the ab-plane between the SrTiO3 substrates and the films, the compressive stress from the substrates may be responsible for the more difficult reduction of the oxygen in the thin films.