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B. Voigtländer

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Published work

3 published item(s)

preprint2022arXiv

Nanoscale tip positioning with a multi-tip scanning tunneling microscope using topography images

Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a sample, four-point resistance measurements can be performed in dedicated geometric configurations. Here, we present an alternative to the most often used scanning electron microscope (SEM) imaging to infer the corresponding tip positions. After initial coarse positioning monitored by an optical microscope, STM scanning itself is used to determine the inter-tip distances. A large STM overview scan serves as a reference map. Recognition of the same topographic features in the reference map and in small scale images with the individual tips allows to identify the tip positions with an accuracy of about 20 nm for a typical tip spacing of ~1 $μ$m. In order to correct for effects like the non-linearity of the deflection, creep and hysteresis of the piezo-electric elements of the STM, a careful calibration has to be performed.

preprint2015arXiv

Scanning tunneling potentiometry implemented into a multi-tip setup by software

We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resulting setup allows flexible in situ contacting of samples under UHV conditions and subsequent measurement of the sample topography and local electric potential with resolution down to Å and μV, respectively. The performance of the potentiometry feedback is demonstrated by thermovoltage measurements on the Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ surface by resolving a standing wave pattern. Subsequently, the ability to map the local transport field as a result of a lateral current through the sample surface is shown on Ag/Si$(111)-(\sqrt3\times\sqrt3)\rm R30^{\circ}$ and Si$(111)-(7\times7)$ surfaces.

preprint2013arXiv

Etched graphene quantum dots on hexagonal boron nitride

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.