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A. Epping

A. Epping appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

6 published item(s)

preprint2020arXiv

Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport

We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80 $μ$eV by the displacement field. We assign this gate-tunable subband-splitting to a gap induced by spin-orbit coupling of Kane-Mele type, enhanced by proximity effects due to the substrate. We show that this spin-orbit coupling gives rise to a complex pattern in low perpendicular magnetic fields, increasing the Zeeman splitting in one valley and suppressing it in the other one. In addition, we observe the existence of a spin-polarized channel of 6 e$^2$/h at high in-plane magnetic field and of signatures of interaction effects at the crossings of spin-split subbands of opposite spins at finite magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Insulating state in low-disorder graphene nanoribbons

We report on quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN). At zero magnetic field our devices behave qualitatively very similar to what has been reported for graphene nanoribbons on $\text{SiO}_2$ or hBN, but exhibit a considerable smaller transport gap. At magnetic fields of around $3~$T the transport behavior changes considerably and is dominated by a much larger energy gap induced by electron-electron interactions completely suppressing transport. This energy gap increases with a slope on the order of $3-4~ $meV/T reaching values of up to $ 30~\mathrm{meV} $ at $ 9~ $T.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene

We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_ϕ$ as well as the inter- and intra-valley scattering times $τ_i$ and $τ_*$. While $τ_ϕ$ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting $τ_ϕ$ at low temperatures. The analysis of $τ_i$ and $τ_*$ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride

Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Γand K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope around the kinks in the highest optical branch is proportional to the electron-phonon coupling. Here, we present a combined theoretical and experimental study of the influence of the dielectric substrate on the vibrational properties of graphene. We show that screening by the dielectric substrate reduces the electron-phonon coupling at the high-symmetry point K and leads to an up-shift of the Raman 2D-line. This results in the observation of a Kohn anomaly that can be tuned by screening. The exact position of the 2D-line can thus be taken also as a signature for changes in the (electron-phonon limited) conductivity of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Etched graphene quantum dots on hexagonal boron nitride

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields

We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN which might be an important step towards clean and more controllable graphene QDs.

0 citations0 reviewsNo code linkedOpen access