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Source author record

B. Küng

B. Küng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-conquant-ph

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Published work

5 published item(s)

preprint2015arXiv

A V-shape superconducting artificial atom based on two inductively coupled transmons

Circuit quantum electrodynamics systems are typically built from resonators and two-level artificial atoms, but the use of multi-level artificial atoms instead can enable promising applications in quantum technology. Here we present an implementation of a Josephson junction circuit dedicated to operate as a V-shape artificial atom. Based on a concept of two internal degrees of freedom, the device consists of two transmon qubits coupled by an inductance. The Josephson nonlinearity introduces a strong diagonal coupling between the two degrees of freedom that finds applications in quantum non-demolition readout schemes, and in the realization of microwave cross-Kerr media based on superconducting circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Irreversibility on the Level of Single-Electron Tunneling

We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with the theoretical predictions even under strong nonequilibrium conditions, when the finite bandwidth of the charge detection is taken into account.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optimization of sample-chip design for stub-matched radio-frequency reflectometry measurements

A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are integrated in a 2-4 GHz stub-matching circuit consisting of a waveguide stub shunted to the terminated coplanar waveguide. Several quantum point contacts fabricated on a GaAs/AlGaAs heterostructure with different chip designs are compared. We show that the change of the reflection coefficient for a fixed change in the quantum point contact conductance can be enhanced by a factor of 3 compared to conventional designs by a suitable electrode geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum dot occupation and electron dwell time in the cotunneling regime

We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Highly Tunable Hybrid Quantum Dots with Charge Detection

In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tuning the quantum dot to contain only a single electron, we are able to observe the charge detector signal of the quantum dot state for a wide range of tunnel couplings.

0 citations0 reviewsNo code linkedOpen access