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B. Gu

B. Gu contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2013arXiv

New Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping

We report the discovery of a new diluted magnetic semiconductor, Li(Zn,Mn)P, in which charge and spin are introduced independently via lithium off-stoichiometry and the isovalent substitution of Mn2+ for Zn2+, respectively. Isostructural to (Ga,Mn)As, Li(Zn,Mn)P was found to be a p-type ferromagnetic semiconductor with excess Lithium providing charge doping. First principles calculations indicate that excess Li is favored to partially occupy the Zn site, leading to hole doping. Ferromagnetism is mediated in semiconducting samples of relative low mobile carriers with a small coercive force, indicating an easy spin flip.

preprint2012arXiv

The spin Hall effect as a probe of nonlinear spin fluctuations

The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band structure and the nature of impurities. Here we show an anomaly in the inverse spin Hall effect in weak ferromagnetic NiPd alloys near their Curie temperatures with a shape independent of material details, such as Ni concentrations. By extending Kondo's model for the anomalous Hall effect, we explain the observed anomaly as originating from the second-order nonlinear spin fluctuation of Ni moments. This brings to light an essential symmetry difference between the spin Hall effect and the anomalous Hall effect which reflects the first order nonlinear fluctuations of local moments. Our finding opens up a new application of the spin Hall effect, by which a minuscule magnetic moment can be detected.

preprint2012arXiv

Theory of the spin Hall effect, and its inverse, in a ferromagnetic metal near the Curie temperature

We give a theory of the inverse spin Hall effect (ISHE) in ferromagnetic metals based on skew scattering via collective spin fluctuations. This extends Kondo's theory of the anomalous Hall effect (AHE) to include short-range spin-spin correlations. We find a relation between the ISHE and the four-spin correlations near the Curie temperature TC. Such four-spin correlations do not contribute to the AHE, which relates to the three-spin correlations. Thus our theory shows an essential difference between the AHE and ISHE, providing an essential complement to Kondo's classic theory of the AHE in metals. We note the relation to skew-scattering mechanisms based on impurity scattering. Our theory can be compared to recent experimental results byWei et al. [Nat. Commun. 3, 1058 (2012)] for the ISHE in ferromagnetic alloys.

preprint2012arXiv

Unexpected Anisotropic Two Dimensional Electron Gas at the LaAlO3/SrTiO3 (110) Interface

The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the potential of complex oxides for novel electronics. The occurrence of the 2DEG is strongly believed to be driven by the polarization discontinuity (9) at the interface between the two oxides. In this scenario, the crystal orientation plays an important role and no conductivity would be expected for e.g., the interface between LaAlO3 and (110)-oriented SrTiO3, which should not have a polarization discontinuity (10, 11). Here, we report the observation of unexpected conductivity at the LaAlO3/SrTiO3 interface prepared on (110)-oriented SrTiO3. The conductivity was further found to be strongly anisotropic, with the ratio of the conductance along the different directions parallel to the substrate surface showing a remarkable dependence on the oxygen pressure during deposition. The conductance and its anisotropy are discussed based on the atomic structure at the interface, as revealed by Scanning Transmission Electron Microscopy (STEM) and further supported by density functional theory (DFT) calculations.

preprint2010arXiv

Surface-assisted Spin Hall Effect in Au Films with Pt Impurities

We show, both experimentally and theoretically, a novel route to obtain giant room temperature spin Hall effect due to surface-assisted skew scattering. In the experiment, we report the spin Hall effect in Pt-doped Au films with different thicknesses $t_N$. The giant spin Hall angle $γ_S$ = $0.12 \pm 0.04$ is obtained for $t_N$ = 10 nm at room temperature, while it is much smaller for $t_N$ = 20 nm sample. Combined ab initio and quantum Monte Carlo calculations for the skew scattering due to a Pt impurity show $γ_S$ $\cong$ 0.1 on the Au (111) surface, while it is small in bulk Au. The quantum Monte Carlo results show that the spin-orbit interaction of the Pt impurity on the Au (111) surface is enhanced, because the Pt 5d levels are lifted to the Fermi level due to the valence fluctuation. In addition, there are two spin-orbit interaction channels on the Au (111) surface, while only one in bulk Au.