Researcher profile

B. Fallahazad

B. Fallahazad contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci

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preprint2016arXiv

Band offset and negative compressibility in graphene-MoS2 heterostructures

We use electron transport to characterize monolayer graphene - multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the electron branch which signals the onset of MoS2 conduction band population. Surprisingly, the carrier density in graphene decreases with gate bias once MoS2 is populated, demonstrating negative compressibility in MoS2. We are able to interpret our measurements quantitatively by accounting for disorder and using the random phase approximation (RPA) for the exchange and correlation energies of both Dirac and parabolic-band two-dimensional electron gases. This interpretation allows us to extract the energetic offset between the conduction band edge of MoS2 and the Dirac point of graphene.

preprint2012arXiv

Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ~50 cm2/V.s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.

preprint2011arXiv

Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure

We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.