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B. Faina

B. Faina contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2018arXiv

Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals

The magnetotransport in phase-separated (Ga,Fe)N containing $γ$&#39;-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $γ$&#39;-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.

preprint2014arXiv

Experimental determination of Rashba spin-orbit coupling in wurtzite $n$-GaN:Si

Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajectories. The Rashba parameter $α_{\text{R}}\,=\,(4.5 \pm 1)$ meV$Å$ is determined, and it is shown that in the previous studies of electrons adjacent to GaN/(Al,Ga)N interfaces, bulk inversion asymmetry was dominant over structural inversion asymmetry. The comparison of experimental and theoretical values of $α_{\text{R}}$ across a series of wurtzite semiconductors is presented as a test of current relativistic ab initio computation schemes. It is found that electron-electron scattering with small energy transfer accounts for low temperature decoherence in these systems.

preprint2014arXiv

Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite (Ga,Fe)N

The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Optical transitions originating from all three free excitons A, B and C, specific to the wurtzite structure, have been observed and their evolution with the magnetic field determined. It is demonstrated that the magnitude of the exciton splittings evaluated from reflectivity-MCD data can be overestimated by more than a factor of 2, as compared to the values obtained by describing the polarization-resolved reflectivity spectra with appropriate dielectric functions. A series of model calculations shows that the quantitative inaccuracy of MCD originates from a substantial influence of the magnetization-dependent exchange interactions not only on the spin splittings of excitons but also upon their linewidth and oscillator strength. At the same time, a method is proposed that allows to evaluate the field and temperature dependencies of the magnetization from MCD spectra. The accurate values of the excitonic splittings and of the magnetization reported here substantiate the magnitudes of the apparent $sp-d$ exchange integrals in (Ga,Fe)N previously determined.

preprint2014arXiv

Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies

A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n-type wurtzite (Ga,Mn)N:Si films grown by metalorganic vapor phase epitaxy. Millikelvin magnetoresistance studies and their quantitative interpretation point to N0α < 40 meV, a value at least 5 times smaller than the one found with similar measurements on, e.g., $n$-(Zn,Mn)O. It is shown that this striking difference in the values of the s-d coupling between $n$-type III-V and II-VI dilute magnetic semiconductors can be explained by a theory that takes into account the acceptor character of Mn in III-V compounds.

preprint2013arXiv

Magnetooptical properties of (Ga,Fe)N layers

Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed.

preprint2012arXiv

Origin of low-temperature magnetic ordering in Ga1-xMnxN

By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy of state-of-the-art ab initio methods in predicting the magnetic characteristics of dilute magnetic insulators.

preprint2011arXiv

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.

preprint2011arXiv

The Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg

The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digitally-Mg codoped samples are considered and contrasted to the case of (Ga,Fe)N layers obtained without any codoping by shallow impurities. The structural analysis of the layers by high-resolution transmission electron microscopy and by high-resolution- and synchrotron x-ray diffraction gives evidence of the fact that in the case of homogenous-Mg doping, Mg and Fe competitively occupy the Ga-substitutional cation sites, reducing the efficiency of Fe incorporation. Accordingly, the character of the magnetization is modified from ferromagnetic-like in the non-codoped films to paramagnetic in the case of homogeneous Mg codoping. The findings are discussed vis-`a-vis theoretical results obtained by ab initio computations, showing only a weak effect of codoping on the pairing energy of two Fe cations in bulk GaN. However, according to these computations, codoping reverses the sign of the paring energy of Fe cations at the Ga-rich surface, substantiating the view that the Fe aggregation occurs at the growth surface. In contrast to the homogenous deposition mode, the digital one is found to remarkably promote the aggregation of the magnetic ions. The Fe-rich nanocrystals formed in this way are distributed non-uniformly, giving reason for the observed deviation from a standard superparamagnetic behavior.

preprint2010arXiv

Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N

Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination of the apparent exchange integrals N0alpha(app) = 0.0 +/- 0.1 eV and N0beta(app) = +0.8 +/- 0.2 eV. These non-standard values and signs of the s - d and p - d exchange energies are explained in terms of recent theories that suggest a contribution of the electron-hole exchange to the spin splitting of the conduction band and a renormalization of the free hole spin-splitting by a large p - d hybridization. According to these models, in the limit of a strong p - d coupling, the band gap of (Ga,Mn)N increases with x and the order of hole spin subbands is reversed, as observed.

preprint2010arXiv

Element specific characterization of heterogeneous magnetism in (Ga,Fe)N films

We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signal at the Fe L-edges in remanence and at moderate magnetic fields at 300 K links the high temperature ferromagnetism with the Fe(3d) states. The XMCD response at the N K-edge highlights that the N(2p) states carry considerable spin polarization. We conclude that FeNδ nanocrystals, with δ> 0.25, stabilize the ferromagnetic response of the films.

preprint2010arXiv

Embedded magnetic phases in (Ga,Fe)N: the key role of growth temperature

The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal organic vapor phase epitaxy is studied by high resolution synchrotron x-ray diffraction and absorption, transmission electron microscopy, and superconducting quantum interference device magnetometry as a function of the growth temperature $T_{\mathrm{g}}$. Three contributions to the magnetization are identified: i) paramagnetic -- originating from dilute and non-interacting Fe$^{3+}$ ions substitutional of Ga, and dominating in layers obtained at the lowest considered $T_{\mathrm{g}}$ (800$^{\circ}$C); ii) superparamagnetic-like -- brought about mainly by ferromagnetic nanocrystals of $ε-$Fe$_3$N but also by $γ&#39;$-Fe$_4$N and by inclusions of elemental $α$- and $γ$-Fe, and prevalent in films obtained in the intermediate $T_{\mathrm{g}}$ range; iii) component linear in the magnetic field and associated with antiferromagnetic interactions -- found to originate from highly nitridated Fe$_x$N ($x \leq$ 2) phases, like $ζ$-Fe$_2$N, and detected in samples deposited at the highest employed temperature, $T_{\mathrm{g}}$ = 950$^{\circ}$C. Furthermore, depending on $T_{\mathrm{g}}$, the Fe-rich nanocrystals segregate towards the sample surface or occupy two-dimensional planes perpendicular to the growth direction.