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B. E. Kane

B. E. Kane appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

10 published item(s)

preprint2022arXiv

Observation of undercooling in a levitated nanoscale liquid Au droplet

We investigate melting and undercooling in nanoscale (radius ~100 nm) gold particles that are levitated in a quadrupole ion (Paul) trap in a high vacuum environment. The particle is heated via laser illumination and probed using two main methods. Firstly, measurements of its mass are used to determine the evaporation rate during illumination and infer the temperature of the particle. Secondly, direct optical measurements show that the light scattered from the particle is significantly different in its liquid and solid phases. The particle is repeatedly heated across its melting transition, and the dependence of heating behavior on particle size is investigated. Undercooling -- the persistence of a liquid state below the melting temperature -- is induced via multi-stage laser pulses. The extent of undercooling is explored and compared to theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces

We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a two-dimensional hole system (2DHS) can be populated in the same conduction channel by changing the gate voltage of a global gate applied through a vacuum gap. Depending on the gate bias, ion implanted n$^+$ and p$^+$ regions function either as Ohmic contacts or as in-plane gates, which laterally confine the carriers induced by the global gate. On one device, electron and hole densities of up to $7.8\times10^{11}$ cm$^{-2}$ and $7.6\times10^{11}$ cm$^{-2}$ respectively are obtained. The peak electron mobility is $1.76\times10^5$ cm$^{2}$/Vs, and the peak hole mobility is $9.1\times10^3$ cm$^{2}$/Vs at 300 mK; the ratio of about 20 is mainly due to the very different valley degeneracies (6:1) of electrons and holes on the Si(111) surface. On another device, the peak electron mobility of $2.2\times10^5$ cm$^{2}$/Vs is reached at 300 mK. These devices are hexagonal in order to investigate the underlying symmetry of the 2DESs, which have a sixfold valley degeneracy at zero magnetic field. Three magnetoresistance measurements with threefold rotational symmetry are used to determine the symmetry of the 2DESs at different magnetic field. At filling factor $1 < ν< 2$, the observed anisotropy can be explained by a single valley pair occupancy of composite fermions (CFs). Qualitatively the CFs preserve the valley anisotropy, in addition to the twofold valley degeneracy. At magnetic field up to 35 T, the 2/3 fractional quantum Hall state is observed with a well developed hall plateau; at $ν<2/3$, the three magnetoresistances show a large anisotropy (50:1). We also show that device degradation is not a serious issue for our measurements, if the device is kept in vacuum or a nitrogen gas environment and its time in air is minimized.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Cooling of Levitated Graphene Nanoplatelets in High Vacuum

We demonstrate cooling of the center of mass motion of charged graphene nanoplatelets levitated in a quadrupole ion trap in high vacuum down to temperatures of 20 K. Parametric feedback based on optical measurements of particle motion was used to achieve the particle cooling at pressure $p<10^{-6}$ Torr, and cooling along all three axes of motion was observed. Dependence of cooling on the electric fields was measured by varying DC voltages on a set of auxiliary electrodes used to spatially shift the trap minimum. Methods to calibrate mass and charge of the nanoplatelet by measuring its motion frequency dependence on discharge were also explored.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests strong (moderate) metallic temperature dependence with the conductivity decreasing by a factor of 8 (2) between 0.3 K and 4.2 K with the peak electron mobility ($\sim 18$ m$^2$/Vs) being roughly 20 times larger than the peak hole mobility (in the same sample). Our theory explains the data well using RPA screening of background Coulomb disorder, establishing that the observed metallicity is a direct consequence of the strong temperature dependence of the effective screened disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Valley Degenerate 2D Electrons in the Lowest Landau Level

We report low temperature magnetotransport measurements on a high mobility (μ=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe the integral quantum Hall effect at all filling factors ν<=6 and find that ν=2 develops in an unusually narrow temperature range. An extended, exclusively even numerator, fractional quantum Hall hierarchy occurs surrounding ν=3/2, consistent with two-fold valley-degenerate composite fermions (CFs). We determine activation energies and estimate the CF mass.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$ cm$^{-2}$ are obtained, and the peak hole mobility is about $10^4$ cm$^2$/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-de Haas oscillations show a beating pattern due to the spin-orbit effects, and the inferred zero-field spin splitting can be tuned by the gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Levitated Spinning Graphene

A method is described for levitating micron-sized few layer graphene flakes in a quadrupole ion trap. Starting from a liquid suspension containing graphene, charged flakes are injected into the trap using the electrospray ionization technique and are probed optically. At micro-torr pressures, torques from circularly polarized light cause the levitated particles to rotate at frequencies >1 MHz, which can be inferred from modulation of light scattering off the rotating flake when an electric field resonant with the rotation rate is applied. Possible applications of these techniques will be presented, both to fundamental measurements of the mechanical and electronic properties of graphene and to new approaches to graphene crystal growth, modification and manipulation.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel conductance threshold. By using such a vertically coupled Al and Si SET system, we have detected a single-charge defect which is tunnel-coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with the defect are extracted. The results reveal that the defect is not a large puddle or metal island, but its size is rather small, corresponding to a sphere with a radius less than 1 nm. The small size of the defect suggests it is most likely a single-charge trap at the Si/SiO_2 interface. Based on the ratios of the coupling capacitances, the interface trap is estimated to be about 20 nm away from the Si SET.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

Silicon-based Quantum Computation

An architecture for a quantum computer is presented in which spins associated with donors in silicon function as qubits. Quantum operations on the spins are performed using a combination of voltages applied to gates adjacent to the spins and radio frequency applied magnetic fields resonant with spin transitions. Initialization and measurement of electron spins is made by electrostatic probing of a two electron system, whose orbital configuration must depend on the spin states of the electrons because of the Pauli Principle. Specific devices will be discussed which perform all the necessary operations for quantum computing, with an emphasis placed on the qualitative principles underlying their operation. The likely impediments to achieving large-scale quantum computation using this architecture will be addressed: the computer must operate at extremely low temperature, must be fabricated from devices built with near atomic precision, and will require extremely accurate gating operations in order to perform quantum logic. Refinements to the computer architecture will be presented which could remedy each of these deficiencies. I will conclude by discussing a specific realization of the computer using Si/SiGe heterostructures into which donors are deposited using a low energy focused ion beam.

0 citations0 reviewsNo code linkedOpen access