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B. Batlogg

B. Batlogg contributes to research discovery and scholarly infrastructure.

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cond-mat.supr-concond-mat.mtrl-scicond-mat.mes-hall

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Published work

8 published item(s)

preprint2013arXiv

High-pressure flux growth, structural, and superconducting properties of LnFeAsO (Ln = Pr, Nd, Sm) single crystals

Single crystals of the LnFeAsO (Ln1111, Ln = Pr, Nd, and Sm) family with lateral dimensions up to 1 mm were grown from NaAs and KAs flux at high pressure. The crystals are of good structural quality and become superconducting when O is partially substituted by F (PrFeAsO1-xFx and NdFeAsO1-xFx) or when Fe is substituted by Co (SmFe1-xCoxAsO). From magnetization measurements, we estimate the temperature dependence and anisotropy of the upper critical field and the critical current density of underdoped PrFeAsO0.7F0.3 crystal with Tc = 25 K. Single crystals of SmFe1-xCoxAsO with maximal Tc up to 16.3 K for x = 0.08 were grown for the first time. From transport and magnetic measurements we estimate the critical fields and their anisotropy, and find these superconducting properties to be quite comparable to the ones in SmFeAsO1-xFx with a much higher Tc of = 50 K. The magnetically measured critical current densities are as high as 109 A/m2 at 2 K up to 7 T, with indication of the usual fishtail effect. The upper critical field estimated from resistivity measurements is anisotropic with slopes of -8.7 T/K (H // ab-plane) and -1.7 T/K (H // c-axis). This anisotropy (= 5) is similar to that in other Ln1111 crystals with various higher Tc s.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High-frequency gate manipulation of a bilayer graphene quantum dot

We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interplay of composition, structure, magnetism, and superconductivity in SmFeAs1-xPxO1-y

Polycrystalline samples and single crystals of SmFeAs1-xPxO1-y were synthesized and grown employing different synthesis methods and annealing conditions. Depending on the phosphorus and oxygen content, the samples are either magnetic or superconducting. In the fully oxygenated compounds the main impact of phosphorus substitution is to suppress the Néel temperature TN of the spin density wave (SDW) state, and to strongly reduce the local magnetic field in the SDW state, as deduced from muon spin rotation measurements. On the other hand the superconducting state is observed in the oxygen deficient samples only after heat treatment under high pressure. Oxygen deficiency as a result of synthesis at high pressure brings the Sm-O layer closer to the superconducting As/P-Fe-As/P block and provides additional electron transfer. Interestingly, the structural modifications in response to this variation of the electron count are significantly different when phosphorus is partly substituting arsenic. Point contact spectra are well described with two superconducting gaps. Magnetic and resistance measurements on single crystals indicate an in-plane magnetic penetration depth of 200 nm and an anisotropy of the upper critical field slope of 4-5. PACS number(s): 74.70.Xa, 74.62.Bf, 74.25.-q, 81.20.-n

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preprint2010arXiv

Influence of Mg deficiency in MgB2 single crystals on crystal structure and superconducting properties

The effects of high-temperature vacuum-annealing induced Mg deficiency in MgB2 single crystals grown under high pressure were investigated. As the annealing temperature was increased from 800 to 975 C, the average Mg content in the MgB2 crystals systematically decreased, while Tc remains essentially unchanged and the superconducting transition slightly broadens from 0.55 K to 1.3 K. The reduction of the superconducting volume fraction was noticeable already after annealing at 875 C. Samples annealed at 975 C are partially decomposed and the Mg site occupancy is decreased to 0.92 from 0.98 in as-grown crystals. Annealing at 1000 C completely destroys superconductivity. X-ray diffraction analysis revealed that the main final product of decomposition is polycrystalline MgB4 and thus the decomposition reaction of MgB2 can be described as 2MgB2(s) = MgB4(s) + Mg(g). First-principles calculations of the Mg1-x(VMg)xB2 electronic structure, within the supercell approach, show a small downshift of the Fermi level. Holes induced by the vacancies go to both sigma and pi bands. These small modifications are not expected to influence Tc, in agreement with observations. The significant reduction of the superconducting volume fraction without noticeable Tc reduction indicates the coexistence, within the same crystal, of superconductive and non-superconductive electronic phases, associated with regions rich and poor in Mg vacancies.

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preprint2010arXiv

Th substituted SmFeAsO: structural details and superconductivity with Tc above 50 K

Superconducting poly- and single-crystalline samples of Sm1-xThxFeAsO with partial substitution of Sm3+ by Th4+ were synthesized and grown under high pressure and their structural, magnetic and transport properties are studied. The superconducting Tc reaches values higher than 50 K. Bulk superconducting samples (x = 0.08, 0.15, 0.3) do not show any signs of a phase transition from tetragonal to orthorhombic crystal structure at low temperatures. With Th substitution the unit cell parameters a and c shrink and the fractional atomic coordinate of the As site zAs remains almost unchanged, while that of Sm/Th zSm/Th increases. Upon warming from 5 K to 295 K the expansion of the FeAs layer thickness is dominant, while the changes in the other structural building blocks are smaller by a factor of 1/5, and they compensate each other, since the As-Sm/Th distance appears to contract by about the same amount as the O-Sm/Th expands. The poly- and single-crystalline samples are characterized by a full diamagnetic response in low magnetic field, by a high intergrain critical-current density for polycrystalline samples, and by a critical current density of the order of 8 x 105 A/cm2 for single crystals at 2 K in fields up to 7 T. The magnetic penetration depth anisotropy γλ increases with decreasing temperature, a similar behavior to that of SmFeAsO1-xFy single crystals. The upper critical field estimated from resistance measurements is anisotropic with slopes of 5.4 T/K (H//ab plane) and 2.7 T/K (H//c axis), at temperatures sufficiently far below Tc. The upper critical field anisotropy γH is in the range of 2, consistent with the tendency of a decreasing γH with decreasing temperature, already reported for SmFeAsO1-xFy single crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Bulk Superconductivity at 2.6 K in Undoped RbFe_2As_2

The iron arsenide RbFe_2As_2 with the ThCr_2Si_2-type structure is found to be a bulk superconductor with T_c=2.6 K. The onset of diamagnetism was used to estimate the upper critical field H_c2(T), resulting in dH_c2/dT=-1.4 T/K and an extrapolated H_c2(0)=2.5 T. As a new representative of iron pnictide superconductors, superconducting RbFe_2As_2 contrasts with BaFe_2As_2, where the Fermi level is higher and a magnetic instability is observed. Thus, the solid solution series (Rb,Ba)Fe_2As_2 is a promising system to study the crossover from superconductivity to magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N&#39;-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and excellent stability against gate bias stress. It is gratifying to notice that such small OFET operating voltages can be achieved with the relatively simple processing techniques employed in this study.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Single crystals of LnFeAsO1-xFx (Ln=La, Pr, Nd, Sm, Gd) and Ba1-xRbxFe2As2: growth, structure and superconducting properties

A review of our investigations on single crystals of LnFeAsO1-xFx (Ln=La, Pr, Nd, Sm, Gd) and Ba1-xRbxFe2As2 is presented. A high pressure technique has been applied for the growth of LnFeAsO1-xFx crystals, while Ba1-xRbxFe2As2 crystals were grown using quartz ampoule method. Single crystals were used for electrical transport, structure, magnetic torque and spectroscopic studies. Investigations of the crystal structure confirmed high structural perfection and show less than full occupation of the (O, F) position in superconducting LnFeAsO1-xFx crystals. Resistivity measurements on LnFeAsO1-xFx crystals show a significant broadening of the transition in high magnetic fields, whereas the resistive transition in Ba1 xRbxFe2As2 simply shifts to lower temperature. Critical current density for both compounds is relatively high and exceeds 2x109 A/m2 at 15 K in 7 T. The anisotropy of magnetic penetration depth, measured on LnFeAsO1-xFx crystals by torque magnetometry is temperature dependent and apparently larger than the anisotropy of the upper critical field. Ba1-xRbxFe2As2 crystals are electronically significantly less anisotropic. Point-Contact Andreev-Reflection spectroscopy indicates the existence of two energy gaps in LnFeAsO1-xFx. Scanning Tunneling Spectroscopy reveals in addition to a superconducting gap, also some feature at high energy (~20 meV).

0 citations0 reviewsNo code linkedOpen access