Researcher profile

B. Ban-d'Etat

B. Ban-d'Etat contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Damage in graphene due to electronic excitation induced by highly charged ions

Graphene is expected to be rather insensitive to ionizing particle radiation. We demonstrate that single layers of exfoliated graphene sustain significant damage from irradiation with slow highly charged ions. We have investigated the ion induced changes of graphene after irradiation with highly charged ions of different charge states (q = 28-42) and kinetic energies E_kin = 150-450 keV. Atomic force microscopy images reveal that the ion induced defects are not topographic in nature but are related to a significant change in friction. To create these defects, a minimum charge state is needed. In addition to this threshold behaviour, the required minimum charge state as well as the defect diameter show a strong dependency on the kinetic energy of the projectiles. From the linear dependency of the defect diameter on the projectile velocity we infer that electronic excitations triggered by the incoming ion in the above-surface phase play a dominant role for this unexpected defect creation in graphene.

preprint2013arXiv

New experimental setup for in situ measurement of slow ion induced sputtering

A new experimental equipment allowing to study the sputtering induced by ion beam irradiation is presented. The sputtered particles are collected on a catcher which is analyzed in situ by Auger electron spectroscopy without breaking the ultra high vacuum (less than 10-9mbar), avoiding thus any problem linked to possible contamination. This method allows to measure the angular distribution of sputtering yield. Thanks to this new setup it is now possible to study the sputtering of many elements especially light elements such as carbon based materials. Preliminary results are presented in the case of highly oriented pyrolytic graphite and tungsten irradiated by an Ar+ beam at respectively 2.8 keV and 7 keV.