Source author record

Azar B. Eyvazov

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

Catalog footprint

Research overview

2works
4topics
4close collaborators

Published work

2 publications

preprint2015arXiv

A Supercooled Spin Liquid State in the Frustrated Pyrochlore Dy2Ti2O7

A "supercooled" liquid develops when a fluid does not crystallize upon cooling below its ordering temperature. Instead, the microscopic relaxation times diverge so rapidly that, upon further cooling, equilibration eventually becomes impossible and glass formation occurs. Classic supercooled liquids exhibit specific identifiers including microscopic relaxation times diverging on a Vogel-Tammann-Fulcher (VTF) trajectory, a Havriliak-Negami (HN) form for the dielectric function, and a general Kohlrausch-Williams-Watts (KWW) form for time-domain relaxation. Recently, the pyrochlore Dy2Ti2O7 has become of interest because its frustrated magnetic interactions may, in theory, lead to highly exotic magnetic fluids. However, its true magnetic state at low temperatures has proven very difficult to identify unambiguously. Here we introduce high-precision, boundary-free magnetization transport techniques based upon toroidal geometries and gain a fundamentally new understanding of the time- and frequency-dependent magnetization dynamics of Dy2Ti2O7. We demonstrate a virtually universal HN form for the magnetic susceptibility, a general KWW form for the real-time magnetic relaxation, and a divergence of the microscopic magnetic relaxation rates with precisely the VTF trajectory. Low temperature Dy2Ti2O7 therefore exhibits the characteristics of a supercooled magnetic liquid; the consequent implication is that this translationally invariant lattice of strongly correlated spins is evolving towards an unprecedented magnetic glass state, perhaps due to many-body localization of spin.

preprint2013arXiv

Enhanced and continuous electrostatic carrier doping on the SrTiO3_{3} surface

Paraelectrical tuning of a charge carrier density as high as 1013^{13}\,cm−2^{-2} in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta2_{2}O5_{5} hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO3_{3}, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to ∼1013\sim10^{13}cm−2^{-2} carriers, while the field-effect mobility is kept at 10\,cm2^2/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO3_{3}. Namely, the formation and continuous evolution of field domains and current filaments.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.