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Atsushi Asamitsu

Atsushi Asamitsu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.supr-con

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preprint2015arXiv

Simultaneous control of thermoelectric properties in p-type and n-type materials by electric double-layer gating : New design for thermoelectric device

We report novel design for thermoelectric device which can control thermoelectric properties of p-type and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as positive and negative electrodes of the electric double-layer capacitor structure. When the gate voltage was applied between two electrodes, the holes and electrons were accumulated on the surface of Cu2O and ZnO, respectively. The thermopower was measured by applying thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers are worked as a p-n pair of the thermoelectric device.

preprint2014arXiv

Control of Thermoelectric Properties of ZnO using Electric Double Layer

We have successfully controlled thermoelectric properties of ZnO by changing carrier concentration using an electric double layer transistor (EDLT) which is a feld effect transistor gated by electrolyte solution. The resistivity and the thermopower decreased abruptly by applying gate voltage larger than a threshold voltage ( 2V), indicating the increase of carrier concentration on the ZnO surface. The temperature dependence of resistivity became metallic, which is characterized by weak temperature dependence of the resistivity, when gate voltage exceeded 2V. Corresponding to the resistivity, the temperature dependence of thermopower changed remarkably. The thickness of the induced metallic layer was estimated to be about 10nm from the critical carrier concentration of metal-insulator transition, and the power factor was calculated to ~8*10-5Wm-1K2. Although the power factor is not as large as bulk ZnO ceramics of optimum doping condition, EDLT is considered to be a useful way to optimize thermoelectric properties by tuning carrier concentration.

preprint2013arXiv

Superconductivity in the noncentrosymmetric half-Heusler compound LuPtBi : A possible topological superconductor

We report superconductivity in the ternary half-Heusler compound LuPtBi, with Tc = 1.0 K and Hc2 = 1.6 T. The crystal structure of LuPtBi lacks inversion symmetry, hence the material is a noncentrosymmetric superconductor. Magnetotransport data show semimetallic behavior in the normal state, which is evidence for the importance of spin-orbit interaction. Theoretical calculations indicate that the strong spin-orbit interaction in LuPtBi should cause strong band inversion, making this material a promising candidate for 3D topological superconductivity.

preprint2009arXiv

Effect of stripe order strength for the Nernst effect in La_{2-x}Sr_xCu_4 single crystals

We have precisely measured the Nernst effect in Nd-doped La$_{2-x}$Sr$_x$CuO$_4$ single crystals with controlling the strength (stability) of the stripe order. We found that the onset temperature $T_{onset}$, where the Nernst signal starts increasing, does not change conspicuously in spite of Nd-doping. At low temperatures, on the other hand, the absolute value of the Nernst signal is strongly suppressed in accordance with the strength of the stripe order. These results imply that the fluctuation of (charge) stripe order enhances the Nernst signal below $T_{onset}$ at high temperatures, and then the stripe order enhanced by Nd-doping suppresses the superconducting fluctuation to reduce the Nernst signal at low temperatures. We also observed an increase of the Nernst signal below the charge order temperature $T_{ch}$ which is observed in diffraction measurement.