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Researcher profile

Arun Mannodi-Kanakkithodi

Arun Mannodi-Kanakkithodi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nnphysics.comp-ph

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2 published item(s)

preprint2026arXiv

DeFecT-FF: Accelerated Modeling of Defects in Cd-Zn--Te-Se-S Compounds Combining High-Throughput DFT and Machine Learning Force Fields

We developed DeFecT-FF, a framework for predicting the energies and ground-state configurations of native point defects, extrinsic dopants, impurities, and defect complexes in zincblende-phase Cd/Zn-Te/Se/S compounds relevant to CdTe-based solar cells. The framework combines high-throughput DFT data with crystal graph-based machine learning force fields (MLFFs) trained to reproduce DFT energies and forces. Alloying at Cd or Te sites offers a route to tune the electronic and defect properties of CdTe absorbers for improved solar efficiency. Given the vast number of possible defect types, charge states, and symmetry-breaking configurations, traditional DFT approaches are computationally prohibitive. Our dataset includes GGA-PBE and HSE06-optimized structures for bulk, alloyed, interface, and grain-boundary systems. Using active learning, we expanded the dataset and trained MLFFs to accurately predict energies across charge states. The model enabled rapid screening and discovery of new low-energy defect configurations, validated through HSE06 calculations with spin-orbit coupling. The DeFecT-FF framework is publicly available as a nanoHUB tool, allowing users to upload crystallographic files, automatically generate defects, and compute defect formation energies versus Fermi level and chemical potentials, greatly reducing the need for expensive DFT simulations.

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preprint2022arXiv

Machine learning for impurity charge-state transition levels in semiconductors from elemental properties using multi-fidelity datasets

Quantifying charge-state transition energy levels of impurities in semiconductors is critical to understanding and engineering their optoelectronic properties for applications ranging from solar photovoltaics to infrared lasers. While these transition levels can be measured and calculated accurately, such efforts are time-consuming and more rapid prediction methods would be beneficial. Here, we significantly reduce the time typically required to predict impurity transition levels using multi-fidelity datasets and a machine learning approach employing features based on elemental properties and impurity positions. We use transition levels obtained from low-fidelity (i.e., local-density approximation or generalized gradient approximation) density functional theory (DFT) calculations, corrected using a recently proposed modified band alignment scheme, which well-approximates transition levels from high-fidelity DFT (i.e., hybrid HSE06). The model fit to the large multi-fidelity database shows improved accuracy compared to the models trained on the more limited high-fidelity values. Crucially, in our approach, when using the multi-fidelity data, high-fidelity values are not required for model training, significantly reducing the computational cost required for training the model. Our machine learning model of transition levels has a root mean squared (mean absolute) error of 0.36 (0.27) eV vs high-fidelity hybrid functional values when averaged over 14 semiconductor systems from the II-VI and III-V families. As a guide for use on other systems, we assessed the model on simulated data to show the expected accuracy level as a function of bandgap for new materials of interest. Finally, we use the model to predict a complete space of impurity charge-state transition levels in all zinc blende III-V and II-VI systems.

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