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Arun Majumdar

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2014arXiv

Temperature Gated Thermal Rectifier

Heat flow control is essential for widespread applications of heating, cooling, energy conversion and utilization. Here we demonstrate the first observation of temperature-gated thermal rectification in vanadium dioxide beams, in which an environment temperature actively modulates asymmetric heat flow. In this three terminal device, there are two switchable states, which can be accessed by global heating: Rectifier state and Resistor state. In the Rectifier state, up to 28% thermal rectification is observed. In the Resistor state, the thermal rectification is significantly suppressed (below 4%). This temperature-gated rectifier can have substantial implications ranging from autonomous thermal management of micro/nanoscale devices to thermal energy conversion and storage.

preprint2010arXiv

High temperature thermoelectric response of double-doped SrTiO$_3$ epitaxial films

SrTiO$_3$ is a promising $n$-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO$_3$ doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition (PLD). The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 K to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit ($ZT$) was measured to be 0.28 at 873 K at a carrier concentration of $2.5\times10^{21}$ cm$^{-3}$.

preprint2009arXiv

Thermal Probing of Energy Dissipation in Current-Carrying Carbon Nanotubes

The temperature distributions in current-carrying carbon nanotubes have been measured with a scanning thermal microscope. The obtained temperature profiles reveal diffusive and dissipative electron transport in multi-walled nanotubes and in single-walled nanotubes when the voltage bias was higher than the 0.1-0.2 eV optical phonon energy. Over ninety percent of the Joule heat in a multi-walled nanotube was found to be conducted along the nanotube to the two metal contacts. In comparison, about eighty percent of the Joule heat was transferred directly across the nanotube-substrate interface for single-walled nanotubes. The average temperature rise in the nanotubes is determined to be in the range of 5 to 42 K per micro watt Joule heat dissipation in the nanotubes.