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Ardavan Oskooi

Ardavan Oskooi contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2020arXiv

Modeling lasers and saturable absorbers via multilevel atomic media in the Meep FDTD software: Theory and implementation

This technical note describes the physical model, numerical implementation, and validation of multilevel atomic media for lasers and saturable absorbers in Meep: a free/open-source finite-difference time-domain (FDTD) software package for electromagnetics simulation. Simulating multilevel media in the time domain involves coupling rate equations for the populations of electronic energy levels with Maxwell's equations via a generalization of the Maxwell--Bloch equations. We describe the underlying equations and their implementation using a second-order discretization scheme, and also demonstrate their equivalence to a quantum density-matrix model. The Meep implementation is validated using a separate FDTD density-matrix model as well as a frequency-domain solver based on steady-state ab-initio laser theory (SALT).

preprint2013arXiv

Electromagnetic Wave Source Conditions

This chapter discusses the relationships between current sources and the resulting electromagnetic waves in FDTD simulations. First, the "total-field/scattered-field" approach to creating incident plane waves is reviewed and seen to be a special case of the well-known principle of equivalence in electromagnetism: this can be used to construct "equivalent" current sources for any desired incident field, including waveguide modes. The effects of dispersion and discretization are discussed, and a simple technique to separate incident and scattered fields is described in order to compensate for imperfect equivalent currents. The important concept of the local density of states (LDOS) is reviewed, which elucidates the relationship between current sources and the resulting fields, including enhancement of the LDOS via mode cutoffs (Van Hove singularities) and resonant cavities (Purcell enhancement). We also address various other source techniques such as covering a wide range of frequencies and incident angles in a small number of simulations for waves incident on a periodic surface, sources to excite eigenmodes in rectangular supercells of periodic systems, moving sources, and thermal sources via a Monte Carlo/Langevin approach.

preprint2013arXiv

Experimental Demonstration of Quasi-Resonant Absorption in Silicon Thin Films for Enhanced Solar Light Trapping

We experimentally demonstrate that the addition of partial lattice disorder to a thin-film micro-crystalline silicon photonic crystal results in the controlled spectral broadening of its absorption peaks to form quasi resonances; increasing light trapping over a wide bandwidth while also reducing sensitivity to the angle of incident radiation. Accurate computational simulations are used to design the active-layer photonic crystal so as to maximize the number of its absorption resonances over the broadband interval where micro-crystalline silicon is weakly absorbing before lattice disorder augmented with fabrication-induced imperfections are applied to further boost performance. Such a design strategy may find practical use for increasing the efficiency of thin-film silicon photovoltaics.

preprint2013arXiv

Tandem Photonic-Crystal Thin Films Surpassing Lambertian Light-Trapping Limit over Broad Bandwidth and Angular Range

Random surface texturing of an optically-thick film to increase the path length of scattered light rays, first proposed nearly thirty years ago, has thus far remained the most effective approach for photon absorption over the widest set of conditions. Here using recent advances in computational electrodynamics we describe a general strategy for the design of a silicon thin film applicable to photovoltaic cells based on a quasi-resonant approach to light trapping where two partially-disordered photonic-crystal slabs, stacked vertically on top of each other, have large absorption that surpasses the Lambertian limit over a broad bandwidth and angular range.

preprint2012arXiv

Partially-disordered photonic-crystal thin films for enhanced and robust photovoltaics

We present a general framework for the design of thin-film photovoltaics based on a partially-disordered photonic crystal that has both enhanced absorption for light trapping and reduced sensitivity to the angle and polarization of incident radiation. The absorption characteristics of different lattice structures are investigated as an initial periodic structure is gradually perturbed. We find that an optimal amount of disorder controllably introduced into a multi-lattice photonic crystal causes the characteristic narrow-band, resonant peaks to be broadened resulting in a device with enhanced and robust performance ideal for typical operating conditions of photovoltaic applications.

preprint2010arXiv

A novel boundary element method using surface conductive absorbers for full-wave analysis of 3-D nanophotonics

Fast surface integral equation (SIE) solvers seem to be ideal approaches for simulating 3-D nanophotonic devices, as these devices generate fields both in an interior channel and in the infinite exterior domain. However, many devices of interest, such as optical couplers, have channels that can not be terminated without generating reflections. Generating absorbers for these channels is a new problem for SIE methods, as the methods were initially developed for problems with finite surfaces. In this paper we show that the obvious approach for eliminating reflections, making the channel mildly conductive outside the domain of interest, is inaccurate. We describe a new method, in which the absorber has a gradually increasing surface conductivity; such an absorber can be easily incorporated in fast integral equation solvers. Numerical experiments from a surface-conductivity modified FFT-accelerated PMCHW-based solver are correlated with analytic results, demonstrating that this new method is orders of magnitude more effective than a volume absorber, and that the smoothness of the surface conductivity function determines the performance of the absorber. In particular, we show that the magnitude of the transition reflection is proportional to 1/L^(2d+2), where L is the absorber length and d is the order of the differentiability of the surface conductivity function.