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Researcher profile

Aranya Goswami

Aranya Goswami contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phcond-mat.supr-conquant-ph

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Published work

4 published item(s)

preprint2026arXiv

Kinetic Inductance of Few-Layer NbSe$_2$ in the Two-Dimensional Limit

Van der Waals (vdW) superconductors remain superconducting down to the monolayer limit, enabling the exploration of emergent physical phenomena and functionality driven by reduced dimensionality. Here, we report the characterization of the kinetic inductance of atomically thin NbSe$_2$, a two-dimensional van der Waals superconductor, using superconducting coplanar waveguides and microwave measurement techniques familiar to circuit quantum electrodynamics (cQED). The kinetic inductance scales inversely with the number of NbSe$_2$ layers, reaching 1.2 nH/$\Box$ in the monolayer limit. Furthermore, the measured kinetic inductance exhibits a thickness-dependent crossover from clean- to dirty-limit behavior, with enhanced dirty-limit contributions emerging in the ultra-thin regime. These effects are likely driven by increased surface scattering, multi-band superconductivity, and geometric confinement. Additionally, the self-Kerr nonlinearity of the NbSe$_2$ films ranges from $K/2π$ = -0.008 to -14.7 Hz/photon, indicating its strong potential in applications requiring compact, nearly linear, high-inductance superconducting quantum devices and detectors. The fabrication and characterization techniques demonstrated here are extensible to the investigation of other two-dimensional superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards merged-element transmons using silicon fins: the FinMET

A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers.

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preprint2020arXiv

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.

0 citations0 reviewsNo code linkedOpen access