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Anxiao

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Information Theory math.IT Machine Learning

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preprint2020arXiv

Functional Error Correction for Robust Neural Networks

When neural networks (NeuralNets) are implemented in hardware, their weights need to be stored in memory devices. As noise accumulates in the stored weights, the NeuralNet's performance will degrade. This paper studies how to use error correcting codes (ECCs) to protect the weights. Different from classic error correction in data storage, the optimization objective is to optimize the NeuralNet's performance after error correction, instead of minimizing the Uncorrectable Bit Error Rate in the protected bits. That is, by seeing the NeuralNet as a function of its input, the error correction scheme is function-oriented. A main challenge is that a deep NeuralNet often has millions to hundreds of millions of weights, causing a large redundancy overhead for ECCs, and the relationship between the weights and its NeuralNet's performance can be highly complex. To address the challenge, we propose a Selective Protection (SP) scheme, which chooses only a subset of important bits for ECC protection. To find such bits and achieve an optimized tradeoff between ECC's redundancy and NeuralNet's performance, we present an algorithm based on deep reinforcement learning. Experimental results verify that compared to the natural baseline scheme, the proposed algorithm achieves substantially better performance for the functional error correction task.

preprint2014arXiv

Rank-Modulation Rewrite Coding for Flash Memories

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer devices (e.g., smartphones and cameras) where the number of program-erase cycles is small. However, it is not economical for enterprise storage systems that require a large number of lifetime writes. The proposed approach in this paper for alleviating this problem consists of the efficient integration of two key ideas: (i) improving reliability and endurance by representing the information using relative values via the rank modulation scheme and (ii) increasing the overall (lifetime) capacity of the flash device via rewriting codes, namely, performing multiple writes per cell before erasure. This paper presents a new coding scheme that combines rank modulation with rewriting. The key benefits of the new scheme include: (i) the ability to store close to 2 bits per cell on each write with minimal impact on the lifetime of the memory, and (ii) efficient encoding and decoding algorithms that make use of capacity-achieving write-once-memory (WOM) codes that were proposed recently.

preprint2012arXiv

Balanced Modulation for Nonvolatile Memories

This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code. When reading information from a block, it adjusts the reading threshold such that the resulting word is also balanced or approximately balanced. Balanced modulation has suboptimal performance for any cell-level distribution and it can be easily implemented in the current systems of nonvolatile memories. Furthermore, we studied the construction of balanced error-correcting codes, in particular, balanced LDPC codes. It has very efficient encoding and decoding algorithms, and it is more efficient than prior construction of balanced error-correcting codes.

preprint2012arXiv

Nonuniform Codes for Correcting Asymmetric Errors in Data Storage

The construction of asymmetric error correcting codes is a topic that was studied extensively, however, the existing approach for code construction assumes that every codeword should tolerate $t$ asymmetric errors. Our main observation is that in contrast to symmetric errors, asymmetric errors are content dependent. For example, in Z-channels, the all-1 codeword is prone to have more errors than the all-0 codeword. This motivates us to develop nonuniform codes whose codewords can tolerate different numbers of asymmetric errors depending on their Hamming weights. The idea in a nonuniform codes' construction is to augment the redundancy in a content-dependent way and guarantee the worst case reliability while maximizing the code size. In this paper, we first study nonuniform codes for Z-channels, namely, they only suffer one type of errors, say 1 to 0. Specifically, we derive their upper bounds, analyze their asymptotic performances, and introduce two general constructions. Then we extend the concept and results of nonuniform codes to general binary asymmetric channels, where the error probability for each bit from 0 to 1 is smaller than that from 1 to 0.

preprint2011arXiv

Compressed Encoding for Rank Modulation

Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the "push to the top" operation that is not efficient in the general case. We propose a new encoding procedure where a cell level is raised to be higher than the minimal necessary subset - instead of all - of the other cell levels. This new procedure leads to a significantly more compressed (lower charge levels) encoding. We derive an upper bound for a family of codes that utilize the proposed encoding procedure, and consider code constructions that achieve that bound for several special cases.

preprint2010arXiv

Trajectory Codes for Flash Memory

Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data updates are determined by the data structure and the application, and are independent of the constraints imposed by the storage medium. Thus, an appropriate coding scheme is needed so that the data changes can be updated and stored efficiently under the storage-medium's constraints. In this paper, we define the general rewriting problem using a graph model. It extends many known rewriting models such as floating codes, WOM codes, buffer codes, etc. We present a new rewriting scheme for flash memories, called the trajectory code, for rewriting the stored data as many times as possible without block erasures. We prove that the trajectory code is asymptotically optimal in a wide range of scenarios. We also present randomized rewriting codes optimized for expected performance (given arbitrary rewriting sequences). Our rewriting codes are shown to be asymptotically optimal.