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Antonio Tejeda

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.mes-hall

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preprint2016arXiv

Excitonic Emission in Organic-Inorganic Lead Iodide Perovskite Single Crystals

Hybrid perovskite thin films have demonstrated impressive performance for solar energy conversion and optoelectronic applications. However, further progress will benefit from a better knowledge of the intrinsic photophysics of materials. Here, the low temperature emission properties of CH3NH3PbI3 single crystals are investigated and compared to those of thin polycrystalline films by means of steady-state and time-resolved photoluminescence spectroscopy. While the emission properties of thin films and crystals appear relatively similar at room temperature, low temperature photoluminescence spectroscopy reveals striking differences between the two materials. Single crystals photoluminescence exhibits a sharp excitonic emission at high energy, with Full Width at Half Maximum of only 5 meV, assigned to free excitonic recombination and a broad band at low energy. We analyzed the thermal evolution of the free excitonic intensity and linewidth. An excitonic binding energy of 28 meV is extracted from the quenching of the photoluminescence. We highlight a strong broadening of the emission due to LO phonon coupling. The free excitonic emission turned to be very short-lived with a sub-nanosecond dynamics, mainly induced by the fast trapping of the excitons. The free excitonic emission is completely absent of the thin films spectra, which are dominated by trap states band. The trap states energies, width and recombination dynamics present important similarities between films and crystals. These results suggest that the trap states are formed at the surface and grain interface of perovskites.

preprint2015arXiv

Symmetry of the Fermi surface and evolution of the electronic structure across the paramagnetic-helimagnetic transition in MnSi/Si(111)

MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS symmetry and the evolution of the electronic structure across the paramagnetic-helimagnetic transition at T$_C$ $\sim$ 40 K, along with the appearance of sharp quasiparticle emission below T$_C$. The shape of the resulting FS is found to fulfill robust nesting effects. These effects can be at the origin of strong magnetic fluctuations not accounted for by state-of-art quasiparticle self-consistent GW approximation. From this perspective, the unforeseen quasiparticle damping detected in the paramagnetic phase and relaxing only below T$_C$, along with the persistence of the d-bands splitting well above T$_C$, at odds with a simple Stoner model for itinerant magnetism, open the search for exotic magnetic interactions favored by FS nesting and affecting the quasiparticles lifetime.

preprint2015arXiv

Uncertainty principle for experimental measurements: Fast versus slow probes

The result of a physical measurement depends on the timescale of the experimental probe. In solid-state systems, this simple quantum mechanical principle has far-reaching consequences: the interplay of several degrees of freedom close to charge, spin or orbital instabilities combined with the disparity of the time scales associated to their fluctuations can lead to seemingly contradictory experimental findings. A particularly striking example is provided by systems of adatoms adsorbed on semiconductor surfaces where different experiments -- angle-resolved photoemission, scanning tunneling microscopy and core-level spectroscopy -- suggest different ordering phenomena. Using most recent first principles many-body techniques, we resolve this puzzle by invoking the time scales of fluctuations when approaching the different instabilities. These findings suggest a re-interpretation of ordering phenomena and their fluctuations in a wide class of solid-state systems ranging from organic materials to high-temperature superconducting cuprates.

preprint2014arXiv

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of semiconducting graphene. While chemical functionalization was thought to be a route to semiconducting graphene, disorder in the chemical adsorbates, leading to low mobilities, have proved to be a hurdle in its production. We demonstrate a new approach to produce semiconducting graphene that uses a small concentration of covalently bonded surface nitrogen, not as a means to functionalize graphene, but instead as a way to constrain and bend graphene. We demonstrate that a submonolayer concentration of nitrogen on SiC is sufficient to pin epitaxial graphene to the SiC interface as it grows, causing the graphene to buckle. The resulting 3-dimensional modulation of the graphene opens a band-gap greater than 0.7eV in the otherwise continuous metallic graphene sheet.

preprint2013arXiv

Exceptional ballistic transport in epitaxial graphene nanoribbons

Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene ribbons behave as electronic waveguides or quantum dots. We show that transport in these ribbons is dominated by two components of the ground state transverse waveguide mode, one that is ballistic and temperature independent, and a second thermally activated component that appears to be ballistic at room temperature and insulating at cryogenic temperatures. At room temperature the resistance of both components abruptly increases with increasing length, one at a length of 160 nm and the other at 16 micrometers. These properties appear to be related to the lowest energy quantum states in the charge neutral ribbons. Since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well.