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Antonio Ranieri

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physics.ins-det

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preprint2020arXiv

A UV laser test bench for micro-pattern gaseous detectors

UV lasers for the calibration of gaseous detectors have seen newfound employment with current-generation micro-pattern gaseous detectors (MPGDs), especially those devices not suitable for tests with traditional sources (e.g. cosmic rays or X-ray beams) by design constraints. An apparatus made of a UV laser designed for the characterization of the fast timing MPGD (FTM) is here described, together with the measurements of gain curve and electron drift velocity performed on a prototype of Time Projection GEM (TPG) to validate the setup.

preprint2019arXiv

Diamond-Like Carbon for the Fast Timing MPGD

The present generation of Micro-Pattern Gaseous Detectors (MPGDs) are radiation hard detectors, capable of detecting efficiently particle rates of several MHz/cm$^2$ , while exhibiting good spatial resolution ($\leq$ 50 $μ$m) and modest time resolution of 5-10 ns, which satisfies the current generation of experiments (High Luminosity LHC upgrades of CMS and ATLAS) but it is not sufficient for bunch crossing identification of fast timing systems at FCC- hh. Thanks to the application of thin resistive films such as Diamond-Like Carbon (DLC) a new detector concept was conceived: Fast Timing MPGD (FTM). In the FTM the drift volume of the detector has been divided in several layers each with their own amplification structure. The use of resistive electrodes makes the entire structure transparent for electrical signals. After some first initial encouraging results, progress has been slowed down due to problems with the wet-etching of DLC-coated polyimide foils. To solve these problems a more in-depth knowledge of the internal stress of the DLC together with the DLC-polyimide adhesion is required. We will report on the production of DLC films produced in Italy with Ion Beam Sputtering and Pulsed Laser Deposition, where we are searching to improve the adhesion of the thin DLC films, combined with a very high uniformity of the resistivity values.