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Researcher profile

Antonio Cassinese

Antonio Cassinese contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.opticsquant-ph

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Published work

4 published item(s)

preprint2015arXiv

YBCO microwave resonators for strong collective coupling with spin ensembles

Coplanar microwave resonators made of 330 nm-thick superconducting YBCO have been realized and characterized in a wide temperature ($T$, 2-100 K) and magnetic field ($B$, 0-7 T) range. The quality factor $Q_L$ exceeds 10$^4$ below 55 K and it slightly decreases for increasing fields, remaining 90$\%$ of $Q_L(B=0)$ for $B=7$ T and $T=2$ K. These features allow the coherent coupling of resonant photons with a spin ensemble at finite temperature and magnetic field. To demonstrate this, collective strong coupling was achieved by using DPPH organic radical placed at the magnetic antinode of the fundamental mode: the in-plane magnetic field is used to tune the spin frequency gap splitting across the single-mode cavity resonance at 7.75 GHz, where clear anticrossings are observed with a splitting as large as $\sim 82$ MHz at $T=2$ K. The spin-cavity collective coupling rate is shown to scale as the square root of the number of active spins in the ensemble.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Contact-free probing of interfacial charging and Debye-like charge screening in SiO$_2$/PDI8-CN$_2$ systems by optical second harmonic generation

Investigation of the interfacial electronic properties of N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN2) organic semiconductor films grown on silicon dioxide is performed by polarization-resolved second harmonic generation optical spectroscopy, pointing out a spatial region where charge carriers distribution in the semiconductor lacks inversion symmetry. By developing a model for nonlinear susceptibility in the framework of Debye-Huckel screening theory, we show that the experimental findings can be interpreted as resulting from the presence of a net charge localized at the silicon dioxide, accompanied by a non-uniform charge distribution in the organic semiconductor. Photoluminescence analysis further reinforces this scenario. Reduction-oxidation reactions involving PDI8-CN2 and water molecules are invoked as physical origin of the localized charge. The work outlines a sensitive tool to probe the total charge localized at buried semiconductor/dielectric interfaces in organic thin-film transistors without resorting to invasive contact-based analyses.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Very low bias stress in n-type organic single crystal transistors

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are τ~ 2\cdot10^9 s in air and τ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates

We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over the bulk thickness. Surface morphology shows step-like islands, each step being only one monolayer height. The constant and uniform warming of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore, the regular growth kinetic is preserved when increasing the thickness of the film. Electrical measurements on differently structured films evidence the impact of the inter island separation region size on the main charge transport parameters.

0 citations0 reviewsNo code linkedOpen access