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Antonio C. Seridonio

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cond-mat.str-el cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2020arXiv

Griffiths-like phase close to the Mott transition

We explore the coexistence region in the vicinity of the Mott critical end point employing a compressible cell spin- $1/2$ Ising-like model. We analyze the case for the spin-liquid candidate $κ$ -(BEDT-TTF) $_2$ Cu $_2$ (CN) $_3$ , where close to the Mott critical end point metallic puddles coexist with an insulating ferroelectric phase. Our results are fourfold: $i$ ) a universal divergent-like behavior of the Grüneisen parameter upon crossing the first-order transition line; $ii$ ) based on scaling arguments, we show that within the coexistence region, for $any$ system close to the critical point, the relaxation time is entropy-dependent; $iii$ ) we propose the electric Grüneisen parameter $Γ_E$ , which quantifies the electrocaloric effect; $iv$ ) we identify the metallic/insulating coexistence region as an electronic Griffiths-like phase. Our findings suggest that $Γ_E$ governs the dielectric response close to the critical point and that an electronic Griffiths-like phase emerges in the coexistence region.

preprint2009arXiv

Universal zero-bias conductance for the single electron transistor. II: Comparison with numerical results

A numerical renormalization-group survey of the zero-bias electrical conductance through a quantum dot embedded in the conduction path of a nanodevice is reported. The results are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model. A gate potential applied to the conduction electrons is known to change markedly the transport properties of a quantum dot side-coupled to the conduction path; in the embedded geometry here discussed, a similar potential is shown to affect only quantitatively the temperature dependence of the conductance. As expected, in the Kondo regime the numerical results are in excellent agreement with the mapped conductances. In the mixed-valence regime, the mapping describes accurately the low-temperature tail of the conductance. The mapping is shown to provide a unified view of conduction in the single-electron transistor.

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