Researcher profile

Ann N. Chiaramonti

Ann N. Chiaramonti contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Behavior of molecules and molecular ions near a field emitter

The cold emission of particles from surfaces under intense electric fields is a process which underpins a variety of applications including atom probe tomography (APT), an analytical microscopy technique with near-atomic spatial resolution. Increasingly relying on fast laser pulsing to trigger the emission, APT experiments often incorporate the detection of molecular ions emitted from the specimen, in particular from covalently or ionically bonded materials. Notably, it has been proposed that neutral molecules can also be emitted during this process. However, this remains a contentious issue. To investigate the validity of this hypothesis, a careful review of the literature is combined with the development of new methods to treat experimental APT data, the modelling of ion trajectories, and the application of density-functional theory (DFT) simulations to derive molecular ion energetics. It is shown that the direct thermal emission of neutral molecules is extremely unlikely. However, neutrals can still be formed in the course of an APT experiment by dissociation of metastable molecular ions.

preprint2012arXiv

Epitaxial (111) Films of Cu, Ni, and Cu$_xNi$_y$ on α-Al$_2$O$_3$(0001) for Graphene Growth by Chemical Vapor Deposition

Films of (111)-textured Cu, Ni, and Cu$_x$Ni$_y$ were evaluated as substrates for chemical vapor deposition of graphene. A metal thickness of 400 nm to 700 nm was sputtered onto a substrate of $α-$Al$_2$O$_3$(0001) at temperatures of 250 C to 650 C. The films were then annealed at 1000 C in a tube furnace. X-ray and electron backscatter diffraction measurements showed all films have (111) texture but have grains with in-plane orientations differing by $60^{\circ}$. The in-plane epitaxial relationship for all films was $[110]_{metal}$||$[10\bar{1}0]_{{Al}_{2}{O}_{3}}$. Reactive sputtering of Al in O$_2$ before metal deposition resulted in a single in-plane orientation over 97 % of the Ni film but had no significant effect on the Cu grain structure. Transmission electron microscopy showed a clean Ni/Al$_2$O$_3$ interface, confirmed the epitaxial relationship, and showed that formation of the $60^{\circ}$ twin grains was associated with features on the Al$_2$O$_3$ surface. Increasing total pressure and Cu vapor pressure during annealing decreased the roughness of Cu and and Cu$_x$Ni$_y$ films. Graphene grown on the Ni(111) films was more uniform than that grown on polycrystalline Ni/SiO$_2$ films, but still showed thickness variations on a much smaller length scale than the distance between grains.