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Researcher profile

Anmin Nie

Anmin Nie contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2021arXiv

Discovery of carbon-based strongest and hardest amorphous material

Carbon is likely the most fascinating element of the periodic table because of the diversity of its allotropes stemming from its variable (sp, sp2, and sp3) bonding motifs. Exploration of new forms of carbon has been an eternal theme of contemporary scientific research. Here we report on novel amorphous carbon phases containing high fraction of sp3 bonded atoms recovered after compressing fullerene C60 to previously unexplored high pressure and temperature. The synthesized carbons are the hardest and strongest amorphous materials known to date, capable of scratching diamond crystal and approaching its strength which is evidenced by complimentary mechanical tests. Photoluminescence and absorption spectra of the materials demonstrate they are semiconductors with tunable bandgaps in the range of 1.5-2.2 eV, comparable to that of amorphous silicon. A remarkable combination of the outstanding mechanical and electronic properties makes this class of amorphous carbons an excellent candidate for photovoltaic applications demanding ultrahigh strength and wear resistance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct Observation of Room-Temperature Dislocation Plasticity in Diamond

It is well known that diamond does not deform plastically at room temperature and usually fails in catastrophic brittle fracture. Here we demonstrate room-temperature dislocation plasticity in sub-micrometer sized diamond pillars by in-situ mechanical testing in the transmission electron microscope. We document in unprecedented details of spatio-temporal features of the dislocations introduced by the confinement-free compression, including dislocation generation and propagation. Atom-resolved observations with tomographic reconstructions show unequivocally that mixed-type dislocations with Burgers vectors of 1/2<110> are activated in the non-close-packed {001} planes of diamond under uniaxial compression of <111> and <110> directions, respectively, while being activated in the {111} planes under the <100> directional loading, indicating orientation-dependent dislocation plasticity. These results provide new insights into the mechanical behavior of diamond and stimulate reconsideration of the basic deformation mechanism in diamond as well as in other brittle covalent crystals at low temperatures.

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preprint2020arXiv

Dislocation Slip or Phase Transformation Lead to Room-Temperature Plasticity in Diamond: Comment on Plastic Deformation of Single-Crystal Diamond Nanopillars

Despite decades of extensive research on mechanical properties of diamond, much remains to be understood in term of plastic deformation mechanisms due to the poor deformability at room temperature. In a recent work in Advanced Materials, it was claimed that room-temperature plasticity occurred in <001>-oriented single-crystal diamond nanopillars based on observation of unrecovered deformation inside scanning electron microscope. The plastic deformation was suggested to be mediated by a phase transition from sp3 carbon to an O8-carbon phase by molecular dynamics simulations. By comparison, our in-situ transmission electron microscopy study reveals that the room-temperature plasticity can be carried out by dislocation slip in both <100> and <111>-oriented diamond nanopillars. The brittle-to-ductile transition is highly dependent on the stress state. We note that the surface structure may play a significant role in the deformation mechanisms as the incipient plasticity always occurs from the surface region in nanoscale diamonds.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.

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