Researcher profile

Ankan Biswas

Ankan Biswas contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Interlayer Charge-Transfer Ferroelectric Fluctuations as a Pairing Mechanism in van der Waals Superconductors

Signatures of unconventional superconductivity have been reported in a wide range of van der Waals (vdW) materials. However, their microscopic origin remains unclear due to competing electronic orders, strong spin-orbit coupling, and structural instabilities in the normal state. Here we investigate the role of interlayer breathing and shear modes in superconducting vdW heterostructures. Contrary to conventional wisdom -- which assumes that weak interlayer bonding and large layer separation suppress electronic coupling to these modes -- we show that the associated charge transfer can generate a substantial pairing interaction. We develop a theory of superconductivity mediated by such interlayer modes and demonstrate that proximity to a ferroelectric or antiferroelectric quantum critical point provides a strong-coupling pairing channel. Within a two-dimensional model with SU(2) symmetry and in-plane isotropy, we find an accidental degeneracy between interlayer triplet states, which can occur even for an $s$-wave in-plane gap. We further show that Josephson coupling between layers, arising from either static magnetism or induced by paramagnetic correlations, can stabilize a time-reversal-symmetry-breaking superconducting state of the $s+i\,s$ type, which couples to magnetization when at least two mirror symmetries are absent. Our results are directly applicable to candidate chiral vdW superconductors such as 4Hb-TaS$_2$ and to sliding ferroelectric metals, exemplified by bilayer MoTe$_2$. More broadly, our work identifies ferroelectric fluctuations as a promising route to unconventional pairing in vdW systems and motivates experimental searches for chiral multicomponent superconductivity.

preprint2021arXiv

Electronic and Band Structure Calculation of Wurtzite CdS Using GGA and GGA+U functionals

The wurtzite (wz) structure of CdS is analyzed using density functional theory within the generalized gradient approximation (GGA) and Hubbard correction (GGA+U). The total energy convergence evaluation is carried out concerning energy cut-off (ecutwfc) and k-point sampling. The geometry optimization of wz-CdS is calculated using the total energy and force minimization process, which is based on the Broyden Fletcher Goldfarb Shanno (BFGS) optimization algorithm. Bulk modulus and lattice parameters are estimated to ensure accuracy of the calculations. The electronic band structure, density of states (DOS), and projected density of states (PDOS) of wz-CdS are analyzed. The band structure calculation shows CdS as direct band gap semiconductor. The electronic correlation in CdS is altered by varying U-parameters of valence orbitals of Cd and S. The alteration of electronic correlation results in convergence of the band gap to the experimental value 2.4 eV. The alteration of U-parameter affects substantially the density of states near the band edges.